Room-temperature ferromagnetic MnGa nanoparticles in dilute magnetic semiconductor (Ga, Mn)As thin film: preparation and characterization.

The GaAs based diluted magnetic semiconductor, (Ga, Mn)As, with the unique advantage of manipulating the spin and charge was widely investigated in the scientific community and considered as a potential material for the spintronic devices. However, its Curie temperature (), which is limited to around 200 K, hinders the research progress of diluted magnetic semiconductors for potential device applications. Herein, we propose an approach to prepare the MnGa nanoparticles embedded in (Ga, Mn)As matrix using the magnetron sputtering deposition of Mn on GaAs surface, followed by the nano-second pulsed laser annealing (PLA), which gives aabove 400 K.

On Curie temperature of B20-MnSi films.

B20-type MnSi is the prototype magnetic skyrmion material. Thin films of MnSi show a higher Curie temperature than their bulk counterpart. However, it is not yet clear what mechanism leads to the increase of the Curie temperature.

Formation of Thin NiGe Films by Magnetron Sputtering and Flash Lamp Annealing.

The nickel monogermanide (NiGe) phase is known for its electrical properties such as low ohmic and low contact resistance in group-IV-based electronics. In this work, thin films of nickel germanides (Ni-Ge) were formed by magnetron sputtering followed by flash lamp annealing (FLA). The formation of NiGe was investigated on three types of substrates: on amorphous (a-Ge) as well as polycrystalline Ge (poly-Ge) and on monocrystalline (100)-Ge (c-Ge) wafers.