An 8 MeV Electron Beam Modified In:ZnO Thin Films for CO Gas Sensing towards Low Concentration.

In the present investigation, electron beam-influenced modifications on the CO gas sensing properties of indium doped ZnO (IZO) thin films were reported. Dose rates of 5, 10, and 15 kGy were irradiated to the IZO nano films while maintaining the In doping concentration to be 15 wt%. The wurtzite structure of IZO films is observed from XRD studies post electron beam irradiation, confirming structural stability, even in the intense radiation environment.

Defect engineering, microstructural examination and improvement of ultrafast third harmonic generation in GaZnO nanostructures: a study of e-beam irradiation.

Electron beam induced effects on defect engineering and structural, morphological and optical properties of Ga doped ZnO (GaZnO) nanostructures for improved ultrafast nonlinear optical properties are presented. A microstructural analysis was carried out based on the Scherrer, Williamson-Hall, and size-strain models. All three models reveal a peak broadening effect upon electron beam irradiation (EBI) and the crystallite size of the films shows a decrease of 30% compared to unirradiated nanostructures.

Electron beam irradiation revealed genetic differences in radio-sensitivity and generated mutants in groundnut (Arachis hypogaea L.).

Electron beam accelerators are being used for many industrial applications including food and agriculture. A 10MeV linear accelerator facility was standardized for low dose application 0.1-1 kGy) in pulse mode using unscanned scattered beam for irradiation of groundnut seeds for mutation breeding.