Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance.

Chalcogenide compounds are the main characters in a revolution in electronic memories. These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good selectivity and moderate leakage current and phase-change memories (PCMs) with excellent endurance and short read/write times when compared with state-of-the-art flash-NANDs. The combination of these two electrical elements is used to fabricate nonvolatile memory arrays with a write/access time orders of magnitude shorter than that of state-of-the-art flash-NANDs.

Engineering of Ferroelectric HfO-ZrO Nanolaminates.

In this work, the ferroelectric properties of nanolaminates made of HfO and ZrO were studied as a function of the deposition temperature and the individual HfO/ZrO layer thickness before and after electrical field cycling. The ferroelectric response was found to depend on the structure of the nanolaminates before any postdeposition annealing treatment. After annealing with a TiN cap, an "antiferroelectric-like" response was obtained from nanolaminates deposited in an amorphous state at a lower temperature, whereas a ferroelectric response was obtained from nanolaminates deposited at a higher temperature, where crystallites were detected in thick films before annealing.

Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon.

Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the doping level, doping type, crystallographic surface direction, and etchant solution composition.

Hybrid Metal-Semiconductor Nanostructure for Ultrahigh Optical Absorption and Low Electrical Resistance at Optoelectronic Interfaces.

Engineered optoelectronic surfaces must control both the flow of light and the flow of electrons at an interface; however, nanostructures for photon and electron management have typically been studied and optimized separately. In this work, we unify these concepts in a new hybrid metal-semiconductor surface that offers both strong light absorption and high electrical conductivity. We use metal-assisted chemical etching to nanostructure the surface of a silicon wafer, creating an array of silicon nanopillars protruding through holes in a gold film.

Optical transmission enhancement through chemically tuned two-dimensional bismuth chalcogenide nanoplates.

Layer-structured two-dimensional nanomaterials are a family of materials with strong covalent bonding within layers and weak van der Waals interaction between layers, whose vertical thickness can be thinned down to few nanometer and even single atomic layer. Bismuth chalcogenides are examples of such two-dimensional materials. Here, we present our discovery of significant enhancement of light transmission through thin nanoplates of layered bismuth chalcogenides by intercalation of copper atoms, which is on the contrary to most bulk materials in which doping reduces the light transmission.

Improving lithium-sulphur batteries through spatial control of sulphur species deposition on a hybrid electrode surface.

Lithium-sulphur batteries are attractive owing to their high theoretical energy density and reasonable kinetics. Despite the success of trapping soluble polysulphides in a matrix with high surface area, spatial control of solid-state sulphur and lithium sulphide species deposition as a critical aspect has not been demonstrated. Herein, we show a clear visual evidence that these solid species deposit preferentially onto tin-doped indium oxide instead of carbon during electrochemical charge/discharge of soluble polysuphides.

Performance enhancement of metal nanowire transparent conducting electrodes by mesoscale metal wires.

For transparent conducting electrodes in optoelectronic devices, electrical sheet resistance and optical transmittance are two of the main criteria. Recently, metal nanowires have been demonstrated to be a promising type of transparent conducting electrode because of low sheet resistance and high transmittance. Here we incorporate a mesoscale metal wire (1-5 μm in diameter) into metal nanowire transparent conducting electrodes and demonstrate at least a one order of magnitude reduction in sheet resistance at a given transmittance.

Broadband light management using low-Q whispering gallery modes in spherical nanoshells.

Light trapping across a wide band of frequencies is important for applications such as solar cells and photodetectors. Here, we demonstrate a new approach to light management by forming whispering-gallery resonant modes inside a spherical nanoshell structure. The geometry of the structure gives rise to a low quality-factor, facilitating the coupling of light into the resonant modes and substantial enhancement of the light path in the active material, thus dramatically improving absorption.