Some novel binuclear group 13 metal tin hydrides formed in Ar matrices following the codeposition of the metal vapor with SnH4.

IR measurements show that co-condensation of Al or Ga atoms (M) with SnH4 in a solid Ar matrix at about 12 K results mainly in the spontaneous insertion of the metal into an Sn-H bond to form the M(II) hydride HMSnH3. Simultaneously the Ga2 dimer also reacts with SnH4, possibly to form a nido-type cluster Ga2(mu-H)4Sn, with a metal-deficient cubane-like structure. All of these products are photolabile.

Matrix reactivity of Al and Ga atoms (M) in the presence of silane: generation and characterization of the eta2-coordinated complex M.SiH4, the insertion product HMSiH3, and the MI species MSiH3 in a solid argon matrix.

Matrix isolation experiments give evidence for the formation of the loosely bonded metal-silane complex M.SiH(4) by the spontaneous reaction of Al or Ga atoms (M) with silane in a solid Ar matrix at 12 K; however, Ga(2) appears to insert spontaneously into an Si--H bond to form HGaGaSiH(3), probably with the structure HGa(micro-SiH(3))Ga. In M.