Au Gratings Fabricated by Interference Lithography for Experimental Study of Localized and Propagating Surface Plasmons.

Optical properties of high-frequency Au gratings with a fixed period (296.6 ± 0.5 nm) and a variable modulation depth are studied using measurements of spectral and angular dependence of transmission and reflection of polarized light in order to build the dispersion curves of excited optical modes and to identify their types.

Enhancing Surface Plasmon Resonance Detection Using Nanostructured Au Chips.

The increase of the sensitivity of surface plasmon resonance (SPR) refractometers was studied experimentally by forming a periodic relief in the form of a grating with submicron period on the surface of the Au-coated chip. Periodic reliefs of different depths and spatial frequency were formed on the Au film surface using interference lithography and vacuum chalcogenide photoresists. Spatial frequencies of the grating were selected close to the conditions of Bragg reflection of plasmons for the working wavelength of the SPR refractometer and the used environment (solution of glycerol in water).

Fabrication of Periodic Plasmonic Structures Using Interference Lithography and Chalcogenide Photoresist.

This study reports on the employment of the interference lithography (IL) technique, using photoresist based on the chalcogenide glass (ChG) films, for fabrication of one-dimensional (gratings) and two-dimensional (arrays) periodic plasmonic structures on the surface of glass plates. The IL technique was optimized for patterning of the Au and Al layers and formation of gratings and arrays with a spatial frequency of 2000 mm(-1). Optical properties of obtained structures were studied using measurements of spectral and angular dependence of transmission and reflection of polarized light.

The nanostructuring of surfaces and films using interference lithography and chalcogenide photoresist.

The reversible and transient photostimulated structural changes in annealed chalcogenide glass (ChG) layers were used to form interference periodic structures on semiconductor surfaces and metal films. It was shown that negative-action etchants based on amines dissolve illuminated parts of a chalcogenide film, i.e.