This work describes the quantitative characterization of the interfacial chemical and electronic structure of CdSe quantum dots (QDs) coated in one of five p-substituted thiophenolates (X-TP, X = NH2, CH3O, CH3, Cl, or NO2), and the dependence of this structure on the p-substituent X. (1)H NMR spectra of mixtures of CdSe QDs and X-TPs yield the number of X-TPs bound to the surface of each QD. The binding data, in combination with the shift in the energy of the first excitonic peak of the QDs as a function of the surface coverage of X-TP and Raman and NMR analysis of the mixtures, indicate that X-TP binds to CdSe QDs in at least three modes, two modes that are responsible for exciton delocalization and a third mode that does not affect the excitonic energy.
View Article and Find Full Text PDFDisplacement of cadmium oleate (Cd(oleate)2) ligands for the exciton-delocalizing ligand 4-hexylphenyldithiocarbamate (C6-PTC) on the surfaces of CdS quantum dots (QDs) causes a decrease in the band gap (Eg) of the QD of ∼100 meV for QDs with a radius of 1.9 nm and ∼50 meV for QDs with a radius of 2.5 nm.
View Article and Find Full Text PDFThis paper describes the enhancement of the quantum yield of photoluminescence (PL) of CdSe quantum dots (QDs) upon the adsorption of an exciton-delocalizing ligand, phenyldithiocarbamate. Increasing the apparent excitonic radius by only 10% increases the value of the radiative rate constant by a factor of 1.8 and the PL quantum yield by a factor of 2.
View Article and Find Full Text PDFThis Perspective describes the mechanisms by which organic surfactants, in particular, phenyldithiocarbamates (PTCs), couple electronically to the delocalized states of semiconductor quantum dots (QDs). This coupling reduces the confinement energies of excitonic carriers and, in the case of PTC, the optical band gap of metal chalcogenide QDs by up to 1 eV by selectively delocalizing the excitonic hole. The reduction of confinement energy for the hole is enabled by the creation of interfacial electronic states near the valence band edge of the QD.
View Article and Find Full Text PDFThis paper describes a method to control the quantum confinement, and therefore the energy, of excitonic holes in CdSe QDs through adsorption of the hole-delocalizing ligand phenyldithiocarbamate, PTC, and para substitutions of the phenyl ring of this ligand with electron-donating or -withdrawing groups. These substitutions control hole delocalization in the QDs through the energetic alignment of the highest occupied orbitals of PTC with the highest density-of-states region of the CdSe valence band, to which PTC couples selectively.
View Article and Find Full Text PDFDiffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.
View Article and Find Full Text PDFA study of the adsorption equilibrium of solution-phase CdS quantum dots (QDs) and acid-derivatized viologen ligands (N-[1-heptyl],N'-[3-carboxypropyl]-4,4'-bipyridinium dihexafluorophosphate, V(2+)) reveals that the structure of the surfaces of the QDs depends on their concentration. This adsorption equilibrium is monitored through quenching of the photoluminescence of the QDs by V(2+) upon photoinduced electron transfer. When modeled with a simple Langmuir isotherm, the equilibrium constant for QD-V(2+) adsorption, K(a), increases from 6.
View Article and Find Full Text PDFThis paper describes unprecedented bathochromic shifts (up to 970 meV) of the optical band gaps of CdS, CdSe, and PbS quantum dots (QDs) upon adsorption of an organic ligand, phenyldithiocarbamate (PTC), and the use of PTC to map the quantum confinement of specific charge carriers within the QDs as a function of their radius. For a given QD material and physical radius, R, the magnitude of the increase in apparent excitonic radius (ΔR) upon delocalization by PTC directly reflects the degree of quantum confinement of one or both charge carriers. The plots of ΔR vs R for CdSe and CdS show that exciton delocalization by PTC occurs specifically through the excitonic hole.
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