Strongly coupled spins of silicon-vacancy centers inside a nanodiamond with sub-megahertz linewidth.

The search for long-lived quantum memories, which can be efficiently interfaced with flying qubits, is longstanding. One possible solution is to use the electron spin of a color center in diamond to mediate interaction between a long-lived nuclear spin and a photon. Realizing this in a nanodiamond furthermore facilitates the integration into photonic devices and enables the realization of hybrid quantum systems with access to quantum memories.

High-dimensional spin-orbital single-photon sources.

Hybrid integration of solid-state quantum emitters (QEs) into nanophotonic structures opens enticing perspectives for exploiting multiple degrees of freedom of single-photon sources for on-chip quantum photonic applications. However, the state-of-the-art single-photon sources are mostly limited to two-level states or scalar vortex beams. Direct generation of high-dimensional structured single photons remains challenging, being still in its infancy.

Multiple channelling single-photon emission with scattering holography designed metasurfaces.

Channelling single-photon emission in multiple well-defined directions and simultaneously controlling its polarization characteristics is highly desirable for numerous quantum technology applications. We show that this can be achieved by using quantum emitters (QEs) nonradiatively coupled to surface plasmon polaritons (SPPs), which are scattered into outgoing free-propagating waves by appropriately designed metasurfaces. The QE-coupled metasurface design is based on the scattering holography approach with radially diverging SPPs as reference waves.

Two-photon interference from silicon-vacancy centers in remote nanodiamonds.

The generation of indistinguishable photons is a key requirement for solid-state quantum emitters as a viable source for applications in quantum technologies. Restricting the dimensions of the solid-state host to a size well below the wavelength of light emitted by a defect-center enables efficient external optical coupling, for example, for hybrid integration into photonic devices. However, stringent restrictions on the host dimensions result in severe limitations on the spectral properties reducing the indistinguishability of emitted photons.

Ultracompact Single-Photon Sources of Linearly Polarized Vortex Beams.

Ultracompact chip-integrated single-photon sources of collimated beams with polarization-encoded states are crucial for integrated quantum technologies. However, most of currently available single-photon sources rely on external bulky optical components to shape the polarization and phase front of emitted photon beams. Efficient integration of quantum emitters with beam shaping and polarization encoding functionalities remains so far elusive.

Sub-to-super-Poissonian photon statistics in cathodoluminescence of color center ensembles in isolated diamond crystals.

Impurity-vacancy centers in diamond offer a new class of robust photon sources with versatile quantum properties. While individual color centers commonly act as single-photon sources, their ensembles have been theoretically predicted to have tunable photon-emission statistics. Importantly, the particular type of excitation affects the emission properties of a color center ensemble within a diamond crystal.

Femtosecond Er-Doped All-Fiber Laser with High-Density Well-Aligned Carbon-Nanotube-Based Thin-Film Saturable Absorber.

We have studied the ultrafast saturation behavior of a high-density well-aligned single-walled carbon nanotubes saturable absorber (HDWA-SWCNT SA), obtained by a high-pressure and high-temperature treatment of commercially available single-wall carbon nanotubes (SWCNTs) and related it to femtosecond erbium-doped fiber laser performance. We have observed the polarization dependence of a nonlinear optical saturation, along with a low saturation energy level of <1 fJ, limited to the detector threshold used, and the ultrafast response time of <250 fs, while the modulation depth was approximately 12%. We have obtained the generation of ultrashort stretched pulses with a low mode-locking launching threshold of ~100 mW and an average output power of 12.

Fluorescence enhancement of a single germanium vacancy center in a nanodiamond by a plasmonic Bragg cavity.

Germanium vacancy (GeV) centers in diamonds constitute a promising platform for single-photon sources to be used in quantum information technologies. Emission from these color centers can be enhanced by utilizing a cavity that is resonant at the peak emission wavelength. We investigate circular plasmonic Bragg cavities for enhancing the emission from single GeV centers in nanodiamonds (NDs) at the zero phonon line.

Formation of interstitial silicon defects in Si- and Si,P-doped nanodiamonds and thermal susceptibilities of SiV photoluminescence band.

We have produced two types of synthetic nanodiamonds Si- and Si,P-doped and have characterized the thermal susceptibilities of the spectral band of silicon-vacancy (SiV) centers at approximately 740 nm in each case. The covered temperature range from 295 to 350 K is of interest for thermometry in biological systems. Comparison of the relative brightness of the Si- and Si,P-doped crystals shows that phosphorous significantly increases average concentration and homogeneity of distribution of SiV centers in nanodiamonds.

On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides.

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrated on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds were produced to incorporate single germanium-vacancy (GeV) centres, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits.

Varying temperature and silicon content in nanodiamond growth: effects on silicon-vacancy centres.

Nanodidamonds containing colour centres open up many applications in quantum information processing, metrology, and quantum sensing. However, controlling the synthesis of nanodiamonds containing silicon vacancy (SiV) centres is still not well understood. Here we study nanodiamonds produced by a high-pressure high-temperature method without catalyst metals, focusing on two samples with clear SiV signatures.