Publications by authors named "Ventra M"

In the pursuit of scalable and energy-efficient neuromorphic devices, recent research has unveiled a novel category of spiking oscillators, termed "thermal neuristors." These devices function via thermal interactions among neighboring vanadium dioxide resistive memories, emulating biological neuronal behavior. Here, we show that the collective dynamical behavior of networks of these neurons showcases a rich phase structure, tunable by adjusting the thermal coupling and input voltage.

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Neuromorphic systems are typically based on nanoscale electronic devices, but nature relies on ions for energy-efficient information processing. Nanofluidic memristive devices could thus potentially be used to construct electrolytic computers that mimic the brain down to its basic principles of operation. Here we report a nanofluidic device that is designed for circuit-scale in-memory processing.

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Digital memcomputing machines (DMMs) are a new class of computing machines that employ nonquantum dynamical systems with memory to solve combinatorial optimization problems. Here, we show that the time to solution (TTS) of DMMs follows an inverse Gaussian distribution, with the TTS self-averaging with increasing problem size, irrespective of the problem they solve. We provide both an analytical understanding of this phenomenon and numerical evidence by solving instances of the 3-SAT (satisfiability) problem.

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While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, an alternative route is explored based on a new class of spiking oscillators called "thermal neuristors", which operate and interact solely via thermal processes. Utilizing the insulator-to-metal transition (IMT) in vanadium dioxide, a wide variety of reconfigurable electrical dynamics mirroring biological neurons is demonstrated. Notably, inhibitory functionality is achieved just in a single oxide device, and cascaded information flow is realized exclusively through thermal interactions.

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Custodial symmetries are common in the standard model of particle physics. They arise when quantum corrections to a parameter are proportional to the parameter itself. Here, we show that a custodial symmetry of the chiral type is also present in a classical Su-Schrieffer-Heeger (SSH) electrical circuit with memory.

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The deep extension of the restricted Boltzmann machine (RBM), known as the deep Boltzmann machine (DBM), is an expressive family of machine learning models which can serve as compact representations of complex probability distributions. However, jointly training DBMs in the unsupervised setting has proven to be a formidable task. A recent technique we have proposed, called mode-assisted training, has shown great success in improving the unsupervised training of RBMs.

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Emerging brain-inspired neuromorphic computing paradigms require devices that can emulate the complete functionality of biological synapses upon different neuronal activities in order to process big data flows in an efficient and cognitive manner while being robust against any noisy input. The memristive device has been proposed as a promising candidate for emulating artificial synapses due to their complex multilevel and dynamical plastic behaviors. In this work, we exploit ultrastable analog BiFeO (BFO)-based memristive devices for experimentally demonstrating that BFO artificial synapses support various long-term plastic functions, i.

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Digital memcomputing machines (DMMs) are a novel, non-Turing class of machines designed to solve combinatorial optimization problems. They can be physically realized with continuous-time, non-quantum dynamical systems with memory (time non-locality), whose ordinary differential equations (ODEs) can be numerically integrated on modern computers. Solutions of many hard problems have been reported by numerically integrating the ODEs of DMMs, showing substantial advantages over state-of-the-art solvers.

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Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both electrically and optically excited localized surface plasmons, we report a much greater (over 1000× ) plasmonic light emission at upconverted photon energies under combined electro-optical excitation, compared with electrical or optical excitation separately. Two mechanisms compatible with the form of the observed spectra are interactions of plasmon-induced hot carriers and electronic anti-Stokes Raman scattering.

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Article Synopsis
  • Boolean satisfiability (SAT) is a significant problem in various fields and involves determining if a Boolean formula can be satisfied; it typically requires exponentially increasing time to solve difficult instances.
  • A new digital memcomputing machine shows promise in efficiently solving hard SAT instances that usually need exponential time using its memory-assisted approach and integration of non-linear differential equations.
  • This research highlights the machine's ability to solve SAT problems in continuous time without chaos or excessive energy, suggesting potential advancements in physics-inspired computing and applications.
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Recent work on quantum annealing has emphasized the role of collective behavior in solving optimization problems. By enabling transitions of clusters of variables, such solvers are able to navigate their state space and locate solutions more efficiently despite having only local connections between elements. However, collective behavior is not exclusive to quantum annealers, and classical solvers that display collective dynamics should also possess an advantage in navigating a nonconvex landscape.

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An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the results presented in a significant number of publications are at least questionable, if not completely irrelevant to the actual field of memristive neural networks.

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Memcomputing is a novel computing paradigm that employs time non-local dynamical systems to compute with and in memory. The digital version of these machines [digital memcomputing machines or (DMMs)] is scalable, and is particularly suited to solve combinatorial optimization problems. One of its possible realizations is by means of standard electronic circuits, with and without memory.

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Restricted Boltzmann machines (RBMs) and their extensions, often called "deep-belief networks", are powerful neural networks that have found applications in the fields of machine learning and artificial intelligence. The standard way to train these models resorts to an iterative unsupervised procedure based on Gibbs sampling, called "contrastive divergence", and additional supervised tuning via back-propagation. However, this procedure has been shown not to follow any gradient and can lead to suboptimal solutions.

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Universal memcomputing machines (UMMs) represent a novel computational model in which memory (time nonlocality) accomplishes both tasks of storing and processing of information. UMMs have been shown to be Turing-complete, namely, they can simulate any Turing machine. In this paper, we first introduce a novel set theory approach to compare different computational models and use it to recover the previous results on Turing-completeness of UMMs.

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We propose a method to probe the local density of states (LDOS) of atomic systems that provides both spatial and energy resolution. The method combines atomic and tunneling techniques to supply a simple, yet quantitative and operational, definition of the LDOS for both interacting and non-interacting systems: It is the rate at which particles can be siphoned from the system of interest by a narrow energy band of non-interacting states contacted locally to the many-body system of interest. Ultracold atoms in optical lattices are a natural platform for implementing this broad concept to visualize the energy and spatial dependence of the atom density in interacting, inhomogeneous lattices.

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Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate this phenomenon extensively using all-atom molecular dynamics of ionic transport through nanopores of about one nanometer in diameter and up to several nanometers in length. Our goal is to better understand the role of atomic roughness and structure of the pore walls in the ionic Coulomb blockade.

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In Traversa and Di Ventra [Chaos 27, 023107 (2017)] we argued, without proof, that if the non-linear dynamical systems with memory describing the class of digital memcomputing machines (DMMs) have equilibrium points, then no periodic orbits can emerge. In fact, the proof of such a statement is a simple corollary of a theorem already demonstrated in Traversa and Di Ventra [Chaos 27, 023107 (2017)]. Here, we point out how to derive such a conclusion.

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Ion channels play a key role in regulating cell behavior and in electrical signaling. In these settings, polar and charged functional groups, as well as protein response, compensate for dehydration in an ion-dependent way, giving rise to the ion selective transport critical to the operation of cells. Dehydration, though, yields ion-dependent free-energy barriers and thus is predicted to give rise to selectivity by itself.

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We propose to use digital memcomputing machines (DMMs), implemented with self-organizing logic gates (SOLGs), to solve the problem of numerical inversion. Starting from fixed-point scalar inversion, we describe the generalization to solving linear systems and matrix inversion. This method, when realized in hardware, will output the result in only one computational step.

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Memristors, memcapacitors, and meminductors represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their constituent variables, is their distinctive fingerprint. This feature endows them with the ability to store and process information on the same physical location, a property that is expected to benefit many applications ranging from unconventional computing to adaptive electronics to robotics.

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Networks with memristive elements (resistors with memory) are being explored for a variety of applications ranging from unconventional computing to models of the brain. However, analytical results that highlight the role of the graph connectivity on the memory dynamics are still few, thus limiting our understanding of these important dynamical systems. In this paper, we derive an exact matrix equation of motion that takes into account all the network constraints of a purely memristive circuit, and we employ it to derive analytical results regarding its relaxation properties.

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We introduce a class of digital machines, we name Digital Memcomputing Machines, (DMMs) able to solve a wide range of problems including Non-deterministic Polynomial (NP) ones with polynomial resources (in time, space, and energy). An abstract DMM with this power must satisfy a set of compatible mathematical constraints underlying its practical realization. We prove this by making a connection with the dynamical systems theory.

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The development of neuromorphic systems based on memristive elements-resistors with memory-requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a discontinuous transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON-OFF ratio. We investigate the consequences of this transition for the memristive current-voltage characteristics both through simulation and theory, and demonstrate the role of current-voltage duality in relating forward and reverse switching processes.

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