ReS on GaN Photodetector Using H Ion-Cut Technology.

The wafer-scale single-crystal GaN film was transferred from a commercial bulk GaN wafer onto a Si (100) substrate by combining ion-cut and surface-activated bonding. Well-defined, uniformly thick, and large-scale wafer size ReS multilayers were grown on the GaN substrate. Finally, ReS photodetectors were fabricated on GaN and sapphire substrates, respectively, and their performances were compared.