Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique.

InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS).

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.

Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photoluminescence measurements reveal all the samples of different spacers with good optical properties.

Carbon-covered magnetic nanomaterials and their application for the thermolysis of cancer cells.

Three types of graphitic shelled-magnetic core (Fe, Fe/Co, and Co) nanoparticles (named as C-Fe, C-Fe/Co, and C-Co NPs) were synthesized by radio frequency-catalytic chemical vapor deposition (RF-cCVD). X-ray diffraction and X-ray photoelectron spectroscopy analysis revealed that the cores inside the carbon shells of these NPs were preserved in their metallic states. Fluorescence microscopy images indicated effective penetrations of the NPs through the cellular membranes of cultured cancer HeLa cells, both inside the cytoplasm and the nucleus.

Light-harvesting using high density p-type single wall carbon nanotube/n-type silicon heterojunctions.

Photovoltaic conversion was achieved from high-density p-n heterojunctions between single-wall carbon nanotubes (SWNTs) and n-type crystalline silicon produced with a simple airbrushing technique. The semitransparent SWNT network coating on n-type silicon substrate forms p-n heterojunctions and exhibits rectifying behavior. Under illumination the numerous heterojunctions formed between substrate generate electron-hole pairs, which are then split and transported through SWNTs (holes) and n-Si (electrons), respectively.