Intracavity Raman conversion of a red semiconductor disk laser using diamond.

We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%.

Monolithic diamond Raman laser.

A monolithic diamond Raman laser is reported. It utilizes a 13-mm radius of curvature lens etched onto the diamond surface and dielectric mirror coatings to form a stable resonator. The performance is compared to that of a monolithic diamond Raman laser operating in a plane-plane cavity.

Experimental analysis of emission linewidth narrowing in a pulsed KGd(WO ₄) ₂ Raman laser.

The linewidth of a KGd(WO ₄) ₂ (KGW) intracavity pumped Raman laser is analyzed experimentally for different configurations of the Raman and pump laser resonators: with narrow and broadband pump emission profiles, with and without linewidth narrowing elements in the Raman laser resonator, with and without injection seeding into the Raman cavity. The benefits of a narrow linewidth pump source in combination with linewidth narrowing elements in the Raman laser cavity for the efficient linewidth narrowing of the Raman laser emission are explained. 20 kW peak-power pulses at 1156 nm with 0.

Optical trapping with "on-demand" two-photon luminescence using Cr:LiSAF laser with optically addressed saturable Bragg reflector.

We demonstrate a diode-pumped Cr:LiSAF laser with controllable and reliable fast switching between its continuous-wave and mode-locked states of operation using an optically-addressed semiconductor Bragg reflector, permitting dyed microspheres to be continuously trapped and monitored using a standard microscope imaging and on-demand two-photon-excited luminescence techniques.

1.6 W continuous-wave Raman laser using low-loss synthetic diamond.

Low-birefringence (Δn<2x10(-6)), low-loss (absorption coefficient <0.006 cm(-1) at 1064 nm), single-crystal, synthetic diamond has been exploited in a CW Raman laser. The diamond Raman laser was intracavity pumped within a Nd:YVO4 laser.

Passive Q-switching of diode pumped Nd:KGd(WO4)2 lasers by V3+:Y3Al5O12 crystal with anisotropy of nonlinear absorption.

Use of a V(3+):Y(3)Al(5)O(12) crystal as a saturable absorber Q-switch for 1.07 and 1.35 microm Nd:KGd(WO(4))(2) diode pumped lasers shows a considerable dependence of output characteristics on the orientation of the intracavity field polarization vector regarding V(3+):Y(3)Al(5)O(12) crystallographic axes.