Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes.

The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C and 650 keV N ions in the fluence range of 1 × 10 to 1 × 10 ions cm. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile.