Correction: laser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of AsSeSb thin films for photonic applications.

[This corrects the article DOI: 10.1039/D1RA02368C.].

laser irradiation: the kinetics of the changes in the nonlinear/linear optical parameters of AsSeSb thin films for photonic applications.

The photosensitivity of amorphous chalcogenide thin films brings out light-induced changes in the nonlinear and linear optical parameters upon sub-bandgap and bandgap laser irradiation. The present work reports the laser irradiated changes in the optical properties of AsSeSb thin films. The thermally evaporated film showed an exponential decrease in optical bandgap and increase in Urbach energy.

The impact of fluence dependent proton ion irradiation on the structural and optical properties of BiInSe thin films for nonlinear optical devices.

This paper reports the effects of ion irradiation on the structural, linear, and nonlinear optical properties of thermally evaporated BiInSe thin films. The prepared films were irradiated with 30 keV proton ions with different fluences, such as 5 × 10 ions per cm, 1 × 10 ions per cm, and 5 × 10 ions per cm. Structural analysis X-ray diffraction (XRD) confirmed the non-crystalline nature of the film after ion irradiation with different doses.

Observation of high nonlinearity in Bi doped BiInSe thin films with annealing.

The present work demonstrates the impact of thermal annealing on the structural, linear, and non-linear optical characteristics of thermally evaporated BiInSe (x = 0, 5, 10, 15 at%) thin films. The prominent crystalline phases have been developed for all annealed films at 450 °C whereas the films remain amorphous at 350 °C annealing. The XRD and Raman analysis showed the phase transformation of Bi-doped films and new BiSe phases developed upon annealing at 450 °C.

Simplified chemical processed CdAlS thin films for high-performance photodetector applications.

In this present investigation, we report the effect of aluminum (Al) doping on the photoelectric performance of cadmium sulfide (CdS) thin films prepared by cost-effective automatic nebulizer spray method. The doping of Al concentrations varied from 1 at.% to 9 at.

Role of annealing temperature on optimizing the linear and nonlinear optical properties of AsSeGe films.

The present work shows the effect of annealing conditions on the linear and nonlinear optical properties of two-year-old thermally evaporated 800 nm AsSeGe thin films. The aging effect in this film is clearly noticeable as compared with the old observation. The two-year-old films were annealed at different temperatures like 373, 413, 453 and 493 K for 1 h.