Design and fabrication of a microcoil metamaterial absorber for the sub-terahertz region.

The development of electromagnetic wave absorbers operating in the sub-terahertz (sub-THz) region is necessary in 6G communications. We designed and fabricated a sub-THz metamaterial absorber based on metal microcoils embedded and periodically arranged in a dielectric substrate. The microcoil parameters were optimized by calculating the electromagnetic response of the metamaterial using finite element analysis.

Optimum excitation wavelength and photon energy threshold for spintronic terahertz emission from Fe/Pt bilayer.

Terahertz emission from ferromagnetic/non-magnetic spintronic heterostructures had been demonstrated as pump wavelength-independent. We report, however, the pump wavelength dependence of terahertz emission from an optimized Fe/Pt spintronic bilayer on MgO substrate. Maximum terahertz generation per total pump power was observed in the 1200- to 1800-nm pump wavelength range, and a marked decrease in the terahertz emission efficiency beyond 2500 nm (pump photon energies <0.

A Study of Terahertz-Wave Cylindrical Super-Oscillatory Lens for Industrial Applications.

This paper describes the design and development of a cylindrical super-oscillatory lens (CSOL) for applications in the sub-terahertz frequency range, which are especially ideal for industrial inspection of films using terahertz (THz) and millimeter waves. Product inspections require high resolution (same as inspection with visible light), long working distance, and long depth of focus (DOF). However, these are difficult to achieve using conventional THz components due to diffraction limits.

Terahertz Wave Absorption Property of all Mixed Organic-Inorganic Hybrid Perovskite Thin Film MA(Sn, Pb)(Br, I) Fabricated by Sequential Vacuum Evaporation Method.

All mixed hybrid perovskite (MA(Sn, Pb)(Br,I)) thin film was fabricated by sequential vacuum evaporation method. To optimize the first layer with PbBr and SnI, we performed different annealing treatments. Further, MA(Sn, Pb)(Br, I) thin film was synthesized on the optimized first layer by evaporating MAI and post-annealing.

Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 10 cm.

Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-voltage and high-frequency applications. For the development of GaN devices, nondestructive characterization of electrical properties particularly for carrier densities in the order of 10 cm or higher is highly favorable.

A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts.

We present the implementation of an efficient terahertz (THz) photoconductive antenna (PCA) emitter design that utilizes high mobility carriers in the two-dimensional electron gas (2DEG) of a modulation-doped heterostructure (MDH). The PCA design is fabricated with recessed metal electrodes in direct contact with the 2DEG region of the MDH. We compare the performance of the MDH PCA having recessed contacts with a PCA fabricated on bulk semi-insulating GaAs, on low temperature-grown GaAs, and a MDH PCA with the contacts fabricated on the surface.

Terahertz Magneto-Optic Sensor/Imager.

We are reporting a new type of compact magneto-optic sensor constructed from terahertz-wave spintronic emitter and electro-optic detector. The corresponding terahertz polarization output of the emitter and the detection phase-sensitivity of the detector depend on the vector of the external magnetic field. The emitter/detector pair consists of two small and thin wafers sandwiched together and capped with a thin gold mirror.

Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy.

We present the use of a "double optical pump" technique in terahertz time-domain emission spectroscopy as an alternative method to investigate the lifetime of photo-excited carriers in semiconductors. Compared to the commonly employed optical pump-probe transient photo-reflectance, this non-contact and room temperature characterization technique allows relative ease in achieving optical alignment. The technique was implemented to evaluate the carrier lifetime in low temperature-grown gallium arsenide (LT-GaAs).

Cherenkov-phase-matched nonlinear optical detection and generation of terahertz radiation via GaAs with metal-coating.

Terahertz (THz) wave detection and emission via Cherenkov-phase-matched nonlinear optical effects at 1.55-μm optical wavelength were demonstrated using a GaAs with metal-coating (M-G-M) and bare GaAs as a reference sample in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). The metal-coated GaAs is superior to the bare wafer both as a THz electro-optic detector and as an emitter.