Publications by authors named "VG Karpov"

Solid state memory and switching devices aimed at replacing the flash memory technology operate by switching from the high to low resistance when conductive filaments are created in response to the electric pulse. The filaments are identified with either structurally different protrusions or purely electronic conductive pathways. The former can appear via the field induced nucleation (FIN), while the latter do not require phase transformations and are attributed to certain types of temperature and bias dependent conductivity.

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We consider the physical effects of dimensional quantization in conductive filaments that underlie operations of some modern electronic devices. We show that, as a result of quantization, a sufficiently thin filament acquires a positive charge. Several applications of this finding include the host material polarization, the stability of filament constrictions, the equilibrium filament radius, polarity in device switching, and quantization of conductance.

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We present a theory of electric field driven phase transitions that occur via nucleation of needle-shaped, metallic particles. The predictions of this theory have much in common with the observations related to nonphotochemical laser induced nucleation (NPLIN). That connection is rather paradoxical because the final NPLIN products are dielectric crystals.

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Random diode arrays represent a new class of nonlinear disordered systems related to the physics of thin-film semiconductor structures and some others. When a disorder strength grows through a certain critical value, they undergo a phase transition from almost uniform to strongly nonuniform random electric potential. A piecewise continuous topography of random potential is predicted.

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The trend of the incidence of tick-borne encephalitis makes one pay attention to the production of blood biological preparations. A detailed programme for improving the production process, which is included into the federal and republican programmes, is outlined.

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