Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices.

In many nano(opto)electronic devices, the roughness at surfaces and interfaces is of increasing importance, with roughness often contributing toward losses and defects, which can lead to device failure. Consequently, approaches that either limit roughness or smoothen surfaces are required to minimize surface roughness during fabrication. The atomic-scale processing techniques atomic layer deposition (ALD) and atomic layer etching (ALE) have experimentally been shown to smoothen surfaces, with the added benefit of offering uniform and conformal processing and precise thickness control.

Surface Chemistry during Atomic Layer Deposition of Pt Studied with Vibrational Sum-Frequency Generation.

A detailed understanding of the growth of noble metals by atomic layer deposition (ALD) is key for various applications of these materials in catalysis and nanoelectronics. The Pt ALD process using MeCpPtMe and O gas as reactants serves as a model system for the ALD processes of noble metals in general. The surface chemistry of this process was studied by vibrational broadband sum-frequency generation (BB-SFG) spectroscopy, and the results are placed in the context of a literature overview of the reaction mechanism.

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO Studied by Gas-Phase Infrared and Optical Emission Spectroscopy.

An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO using bisdiethylaminosilane (BDEAS, SiH[NEt]) and O plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100-250 °C, the process demonstrates self-limiting growth with a growth per cycle (GPC) between 0.12 and 0.

Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions.

Oxygen is often detected as impurity in metal and metal nitride films prepared by atomic layer deposition (ALD) and its presence has profound and adverse effects on the material properties. In this work, we present the case study of HfN films prepared by plasma-assisted ALD by alternating exposures of CpHf(NMe) and H plasma. First, we identify the primary source of O contamination in the film.

Atomic Layer Deposition of Al-Doped MoS: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density.

Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS via plasma-enhanced atomic layer deposition (ALD), resulting in a particularly sought-after -type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (10 up to 10 cm) while retaining good crystallinity, mobility, and stoichiometry.