[Assessment of the safety and efficacy of medicinal product PPR-001 based on regulatory polypeptides of the testes].

Objective: Evaluation of the effectiveness and safety of the drug PPR-001 (lyophilizate) in comparison with placebo in men with impaired spermatogenesis.

Materials And Methods: This study was a randomized, double-blind, placebo-controlled, prospective, multicenter, parallel-group research.

Results: It was found that the drug has clinical efficacy and a positive effect on the concentration of spermatozoa in the ejaculate, the percentage of progressively mobile forms and the number of morphologically normal forms of spermatozoa was increased in the group of PPR-001.

Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band.

A combination of advanced light engineering concepts enables a substantial improvement in photon extraction efficiency of micro-cavity-based single-photon sources in the telecom O-band at ∼1.3 µm. We employ a broadband bottom distributed Bragg reflector (DBR) and a top DBR formed in a dielectric micropillar with an additional circular Bragg grating in the lateral plane.

Wavelength-stabilized near-field laser.

Surface-trapped electromagnetic waves can be localized at a boundary between a semiconductor distributed Bragg reflector (DBR) and a homogeneous dielectric medium or air. These waves enable a novel class of in-plane-emitting optical devices including edge-emitting lasers, disk microlasers or near-field fiber-coupled lasers. We show that the surface-trapped modes can be controlled by tuning the thickness of a single DBR layer.

Virtual cavity in distributed Bragg reflectors.

We show theoretically and experimentally that distributed Bragg reflector (DBR) supports a surface electromagnetic wave exhibiting evanescent decay in the air and oscillatory decay in the DBR. The wave exists in TM polarization only. The field extension in the air may reach several wavelengths of light.

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates.

We report room temperature injection lasing in the yellow-orange spectral range (599-605 nm) in (AlGa)InP-GaAs diodes with 4 layers of tensile-strained InGaP quantum dot-like insertions. The wafers were grown by metal-organic vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the <111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier insertions were applied to suppress leakage of non-equilibrium electrons from the gain medium.