Publications by authors named "V SATHE"

Despite progress, osteochondral (OC) tissue engineering strategies face limitations in terms of articular cartilage layer development and its integration with the underlying bone tissue. The main objective of this study is to develop a zonal OC scaffold with native biochemical signaling in the cartilage zone to promote articular cartilage development devoid of cells and growth factors. Herein, we report the development and in vivo assessment of a novel gradient and zonal-structured scaffold for OC defect regeneration.

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  • Piezoresponse force microscopy (PFM) is a powerful technique for studying ferroelectric materials at a nanoscale but can produce misleading signals due to electrostatic interactions.
  • The study introduces a calibration process and a method to identify the parasitic phase offset, enhancing the accuracy of the phase-amplitude loops.
  • The techniques combine switching spectroscopy-PFM (SS-PFM) and Kelvin probe force microscopy (KPFM) to quantify local imprint voltages in various materials, revealing the significance of correct read voltage selection and allowing detailed mapping of imprint voltage variations in BaTiO single crystals.
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We have performed a comprehensive study to explore the effect of Sr substitution on the structural and ferroelectric properties of BaTiO(BTO) with compositions BaSrTiOfor 0 ⩽⩽ 1. The room temperature structural investigation inferred that the samples with compositions> 0.30 has cubic phase instead of tetragonal as for pristine BTO.

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  • Ferroelectric domain walls are important for nanoelectronic devices due to their sensitivity to external stimuli, particularly optical signals.
  • Researchers demonstrated that in-plane polarized subdomains in ferroelectric BaTiO can be controlled optically, allowing for reversible movement of domain walls.
  • The study also suggests that flexoelectricity, rather than long-range ferroelectric polarization, plays a crucial role in optical control, making ferroelastic materials viable for future nanoelectronics.
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Coupling of orbital degree of freedom with a spin exchange, i.e., Kugel-Khomskii-type interaction (KK), governs a host of material properties, including colossal magnetoresistance, enhanced magnetoelectric response, and photoinduced high-temperature magnetism.

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