Composition modulation by twinning in InAsSb nanowires.

We observe a composition modulated axial heterostructure in zincblende (ZB) InAsSb nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.

Resistive switching in optoelectronic III-V materials based on deep traps.

Resistive switching random access memories (ReRAM) are promising candidates for energy efficient, fast, and non-volatile universal memories that unite the advantages of RAM and hard drives. Unfortunately, the current ReRAM materials are incompatible with optical interconnects and wires. Optical signal transmission is, however, inevitable for next generation memories in order to overcome the capacity-bandwidth trade-off.

Correction of nonlinear lateral distortions of scanning probe microscopy images.

A methodology for the correction of scanning probe microscopy image distortions is demonstrated. It is based on the determination of displacement vectors from the measurement of a calibration sample. By moving the pixels of the distorted scanning probe microscopy image along the displacement vectors an almost complete correction of the nonlinear, time independent distortions is achieved.