Fermi Level Manipulation through Native Doping in the Topological Insulator BiSe.

The topologically protected surface states of three-dimensional (3D) topological insulators have the potential to be transformative for high-performance logic and memory devices by exploiting their specific properties such as spin-polarized current transport and defect tolerance due to suppressed backscattering. However, topological insulator based devices have been underwhelming to date primarily due to the presence of parasitic issues. An important example is the challenge of suppressing bulk conduction in BiSe and achieving Fermi levels ( E) that reside in between the bulk valence and conduction bands so that the topologically protected surface states dominate the transport.

Sporadic ALS is not associated with VAPB gene mutations in Southern Italy.

Mutations in the Cu/Zn superoxide dismutase (Sod1) gene have been reported to cause adult-onset autosomal dominant Amyotrophic Lateral Sclerosis (FALS). In sporadic cases (SALS) de novo mutations in the Sod1 gene have occasionally been observed. The recent finding of a mutation in the VAMP/synaptobrevin-associated membrane protein B (VAPB) gene as the cause of amyotrophic lateral sclerosis (ALS8), prompted us to investigate the entire coding region of this gene in SALS patients.

The b1 isoform of protocadherin-gamma (Pcdhgamma) interacts with the microtubule-destabilizing protein SCG10.

Due to their structural characteristics and their diversity, the 22 members of the protocadherin-gamma (Pcdhgamma) family have been suggested to contribute to the establishment of specific connections in the nervous system. Here, we focus on a single isoform, Pcdhgamma-b1. Its expression is found in different brain regions and in developing spinal cord it is restricted to scattered cells, whereas all cells are labeled using an antibody that recognizes all Pcdhgamma isoforms.

Atomic-scale observation of temperature and pressure driven preroughening and roughening.

Preroughening and roughening transitions are observed on the GaAs(001) surface using scanning tunneling microscopy. By tuning the substrate temperature or As4 pressure the surface morphology can be made free of islands, covered with one monolayer high islands or covered with islands on top of islands forming a wedding-cake-type structure. These three distinct surface morphologies are classified as ordered flat (OF), disordered flat (DOF), and rough within the restricted solid-on-solid model.

Spatially resolved spin-injection probability for gallium arsenide.

We report a large spin-polarized current injection from a ferromagnetic metal into a nonferromagnetic semiconductor, at a temperature of 100 Kelvin. The modification of the spin-injection process by a nanoscale step edge was observed. On flat gallium arsenide [GaAs(110)] terraces, the injection efficiency was 92%, whereas in a 10-nanometer-wide region around a [111]-oriented step the injection efficiency is reduced by a factor of 6.