Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well.

An external cavity in Littrow configuration based on a reflective diffraction grating and a high-power semiconductor laser based on an asymmetric heterostructure with low optical loss was studied. A continuous-wave optical output power of 13 W with a linewidth of 0.15 nm was achieved for an external-cavity laser.

High peak optical power of 1ns pulse duration from laser diodes - low voltage thyristor vertical stack.

It is shown that the use of low-voltage GaAs/AlGaAs thyristors as high-speed and high-current switches in vertical stacks with semiconductor lasers ensures the efficient generation of high-power ns-duration laser pulses. The lasing and current dynamics in vertical stacks based on laser diode mini bar emitting at 1060 nm and a single as well as a double thyristor switch is studied. The possibility is demonstrated that a laser diode mini bar (with 3 laser emitters) together with a single thyristor switch can generate laser pulses with a peak power of 6 W with a duration of 950 ps and a peak current of 12 A for an operating voltage of 28 V.

[The safety of robotics for restorative medicine].

The present article is devoted to the peculiarities of the safety measures that need to be taken during the operation of the automated robots intended to perform noninvasive controlled deformations of the patient's soft tissues. The authors propose the use of the commercially available devices for nonmedical applications operated without enclosure for staff as basic robots.