Sc-doped GeTe thin films prepared by radio-frequency magnetron sputtering.

Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have GeTe, GeTeSc, GeTeSc, GeTeSc and GeTeSc chemical composition.

Surface functionalization of a chalcogenide IR photonic sensor by means of a polymer membrane for water pollution remediation.

Rapid, simultaneous detection of organic chemical pollutants in water is an important issue to solve for protecting human health. This study investigated the possibility of developing an reusable optical sensor capable of selective measurements utilizing a chalcogenide transducer supplemented by a hydrophobic polymer membrane with detection based on evanescent waves in the mid-infrared spectrum. In order to optimise a polyisobutylene hydrophobic film deposited on a chalcogenide waveguide, a zinc selenide prism was utilized as a testbed for performing attenuated total reflection with Fourier-transform infrared spectroscopy.

Volume detection based on porous silicon waveguide for CO mid-infrared spectroscopy.

A mid-infrared (mid-IR) porous silicon (PSi) waveguide gas sensor was fabricated. PSi guiding and confinement layers were prepared by electrochemical anodization. Ridge waveguides were patterned using standard i-line photolithography and reactive ion etching.

Praseodymium-Doped GeInSbSe Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic Circuits.

In this paper, we report on the infrared luminescence of amorphous praseodymium-doped GeInSbSe waveguides, which can be used as infrared sources in photonic integrated circuits on silicon substrates. Amorphous chalcogenide thin films were deposited by radiofrequency magnetron cosputtering using an argon plasma whose deposition parameters were optimized for chalcogenide materials. The micropatterning as ridge waveguides of the chalcogenide cosputtered films was performed using photolithography and plasma-coupled reactive ion etching techniques.

Ionic Conductivity and Structure of Glasses Synthesized by Mechanical-Milling Methods in the [NaS]-(100 - ) [0.5GeS-0.5GaS] System.

Chalcogenide glasses in the NaS-GeS-GaS pseudoternary system were synthesized using a combination route of melt-quenching and mechanical-milling methods. First, a glass rich in germanium (90GeS-10GaS) is synthesized by melt-quenching synthesis in a silica tube sealed under vacuum. This glass is used as a precursor for the second step of mechanochemistry to explore the NaS-GeS-GaS pseudoternary system.