Super-bandgap light stimulated reversible transformation and laser-driven mass transport at the surface of AsS chalcogenide nanolayers studied .

The super-bandgap laser irradiation of the prepared As-S chalcogenide films was found to cause drastic structural transformations and unexpected selective diffusion processes, leading to As enrichment on the nanolayer surface. Excitation energy dependent synchrotron radiation photoelectron spectroscopy showed complete reversibility of the molecular transformations and selective laser-driven mass transport during "laser irradiation"-"thermal annealing" cycles. Molecular modeling and density functional theory calculations performed on As-rich cage-like clusters built from basic structural units indicate that the underlying microscopic mechanism of laser induced transformations is connected with the realgar-pararealgar transition in the As-S structure.

Hysteresis of Low-Temperature Thermal Conductivity and Boson Peak in Glassy (g) AsS: Nanocluster Contribution.

Experimental results of the thermal conductivity (k(T)) of nanostructured g-AsS during cooling and heating processes within the temperature range from 2.5 to 100 K have been analysed. The paper has considered thermal conductivity is weakly temperature k(T) dependent from 2.

Coherent Light Photo-modification, Mass Transport Effect, and Surface Relief Formation in AsS Nanolayers: Absorption Edge, XPS, and Raman Spectroscopy Combined with Profilometry Study.

As S (x = 40, 45, 50) thin films top surface nanolayers affected by green (532 nm) diode laser illumination have been studied by high-resolution X-ray photoelectron spectroscopy, Raman spectroscopy, optical spectroscopy, and surface profilometry. It is shown that the composition of obtained films depends not only on the composition of the source material but as well on the composition of the vapor during the evaporation process. Near-bandgap laser light decreases both As-As and S-S homopolar bonds in films, obtained from thermal evaporation of the AsS and AsS glasses.

Optical tomography of non-crystalline films by interference enhanced Raman spectroscopy.

The depth dependence of Raman spectra of a-GeS(2)-type films having a different optical thickness (lambda/4 and lambda/2) and their refractive index profile have been investigated. The model of a layered-inhomogeneous structure of films has been proposed. There have been distinguished three regions: near-surface region (up to 50 A), central part and transition film-substrate region (up to 300 A).