ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures.

We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN(11̅00) surface. To this end, ScN is grown on freestanding GaN(11̅00) substrates and self-assembled GaN nanowires exhibiting (11̅00) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]∥GaN(11̅00)[0001], providing a congruent, low-symmetry interface.

X-ray diffraction from dislocation half-loops in epitaxial films.

X-ray diffraction from dislocation half-loops consisting of a misfit segment with two threading arms extending from it to the surface is calculated by the Monte Carlo method. The diffraction profiles and reciprocal space maps are controlled by the ratio of the total lengths of the misfit and the threading segments of the half-loops. A continuous transformation from the diffraction characteristic of misfit dislocations to that of threading dislocations with increasing thickness of epitaxial film is studied.

X-ray scattering study of GaN nanowires grown on Ti/AlO by molecular beam epitaxy.

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on AlO are studied by X-ray diffraction (XRD) and grazing-incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection mode and at grazing incidence, reveals Ti, TiN, TiO, TiAl and GaO crystallites with in-plane and out-of-plane lattice parameters intermediate between those of AlO and GaN. These topotaxial crystallites in the Ti film, formed as a result of interfacial reactions and N exposure, possess little misorientation with respect to AlO.

A route for the top-down fabrication of ordered ultrathin GaN nanowires.

We introduce a facile route for the top-down fabrication of ordered arrays of GaN nanowires with aspect ratios exceeding 10 and diameters below 20 nm. Highly uniform thin GaN nanowires are first obtained by lithographic patterning a bilayer Ni/SiNhard mask, followed by a combination of dry and wet etching in KOH. The SiNis found to work as an etch stop during wet etching, which eases reproducibility.

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111).

We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height for NWs of different lengths. Two distinct trends in the evolution of the cross-sectional shape along the NW length are observed.