Automated circuit fabrication and direct characterization of carbon nanotube vibrations.

Since their discovery, carbon nanotubes have fascinated many researchers due to their unprecedented properties. However, a major drawback in utilizing carbon nanotubes for practical applications is the difficulty in positioning or growing them at specific locations. Here we present a simple, rapid, non-invasive and scalable technique that enables optical imaging of carbon nanotubes.

High performance horizontal gate-all-around silicon nanowire field-effect transistors.

Semiconducting nanowires have been pointed out as one of the most promising building blocks for submicron electrical applications. These nanometer materials open new opportunities in the area of post-planar traditional metal-oxide-semiconductor devices. Herein, we demonstrate a new technique to fabricate horizontally suspended silicon nanowires with gate-all-around field-effect transistors.