Level anticrossing of impurity states in semiconductor nanocrystals.

The size dependence of the quantized energies of elementary excitations is an essential feature of quantum nanostructures, underlying most of their applications in science and technology. Here we report on a fundamental property of impurity states in semiconductor nanocrystals that appears to have been overlooked--the anticrossing of energy levels exhibiting different size dependencies. We show that this property is inherent to the energy spectra of charge carriers whose spatial motion is simultaneously affected by the Coulomb potential of the impurity ion and the confining potential of the nanocrystal.

Kinetics of pulse-induced photoluminescence from a semiconductor quantum dot.

Optical methods, which allow the determination of the dominant channels of energy and phase relaxation, are the most universal techniques for the investigation of semiconductor quantum dots. In this paper, we employ the kinetic Pauli equation to develop the first generalized model of the pulse-induced photoluminescence from the lowest-energy eigenstates of a semiconductor quantum dot. Without specifying the shape of the excitation pulse and by assuming that the energy and phase relaxation in the quantum dot may be characterized by a set of phenomenological rates, we derive an expression for the observable photoluminescence cross section, valid for an arbitrary number of the quantum dot's states decaying with the emission of secondary photons.

Shape-induced anisotropy of intraband luminescence from a semiconductor nanocrystal.

Nonspherical semiconductor nanocrystals (NCs) may exhibit strongly anisotropic photoluminescence due to the intraband transitions, whose matrix elements depend critically on the envelope wave functions of the confined electrons and holes. We demonstrate that this anisotropy may be used as the basis for a new type of polarization spectroscopy, enabling one to reliably determine the shape and spatial orientation of individual NCs, as well as providing important information on the symmetry of quantum states involved in optical transitions.

Influence of annealing on magnetic, relaxation and structural properties of composite and multilayer films.

This work is devoted to the research of influence of annealing to ferromagnetic resonance (FMR) properties of films of the A, B series with the compositions of (Co45-Fe45-Zr10)x(Al2O3)y, multilayer films of the D series with compositions {[(Co45-Fe45-Zr10)x(Al2O3)y]-[alpha-Si]}120 and revealing their relationship with the nanostructure characteristics. The films were obtained in an argon atmosphere (the A, D series) and with addition of oxygen (the B series). All samples were deposited on substrates by the ion-beam sputtering method and were annealed.