Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties.

Unabated, worldwide trends in CO production project growth to > 43-BMT per year over the next two decades. Efficient power electronics are crucial to fully realizing the CO mitigating benefits of a worldwide smart grid (~ 18% reduction for the United States alone). Even state-of-the-art SiC high voltage junction devices are inefficient because of slow transition times (~ 0.

Carrier dynamics in highly excited TlInS: evidence of 2D electron-hole charge separation at parallel layers.

We report a comprehensive study of the time-resolved photoluminescence (PL), carrier recombination, and carrier diffusion under diverse laser pulse excitation in TlInS2. The 2D-layered crystals were grown by the Bridgman method without or with the presence of a small amount of erbium in the melt. The investigation exposes large differences in two crystal types, although, a linear nonradiative lifetime and carrier diffusivity attain close values under high excitation with no contribution of the Auger recombination and the absence of the band gap narrowing effect.

Bismuth oxysulfide film electrodes with giant incident photon-to-current conversion efficiency: the dynamics of properties with deposition time.

It was demonstrated in our previous work that the photoelectrochemical (PEC) reduction processes occur with a giant incident photon-to-current conversion efficiency (IPCE ≫ 100%) at bismuth oxysulfide (BOS) semiconductor films in aqueous solutions containing acceptors of photoelectrons ([Fe(CN)6]3-). The anomalously high IPCE was related to the photoconductivity of the semiconductor. In this work, we analyze the dynamics of the chemical and phase composition of BOS films with variation of their deposition time, as well as the dependence of photocurrent on the film thickness and wavelength of the incident light.

Excitonic absorption above the Mott transition in Si.

We present experimental evidence for the existence of excitonic states above the excitonic Mott transition in both highly doped and highly excited silicon. Previous limitations to resolve the fundamental absorption edge of Si at dense carrier plasmas are overcome employing a novel spatially and time-resolved spectroscopy. We show that the obtained density dependent excess absorption at 75 K represents an excitonic enhancement effect, which is attributed to persisting many-body interactions.