Advanced Modeling and Simulation of Multilayer Spin-Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling.

In advancing the study of magnetization dynamics in STT-MRAM devices, we employ the spin drift-diffusion model to address the back-hopping effect. This issue manifests as unwanted switching either in the composite free layer or in the reference layer in synthetic antiferromagnets-a challenge that becomes more pronounced with device miniaturization. Although this miniaturization aims to enhance memory density, it inadvertently compromises data integrity.

Editorial for the Special Issue on Magnetic and Spin Devices, Volume II.

Although the miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs)-the main driver behind an outstanding increase in the speed, performance, density, and complexity of modern integrated circuits-is continuing, numerous outstanding technological challenges in complimentary metal-oxide-semiconductor (CMOS) device miniaturization are slowly bringing the downscaling to saturation [...

A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices.

We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin currents generated through the spin Hall effect. We scale the magnetization parameters with the temperature.

Finite Element Approach for the Simulation of Modern MRAM Devices.

Because of their nonvolatile nature and simple structure, the interest in MRAM devices has been steadily growing in recent years. Reliable simulation tools, capable of handling complex geometries composed of multiple materials, provide valuable help in improving the design of MRAM cells. In this work, we describe a solver based on the finite element implementation of the Landau-Lifshitz-Gilbert equation coupled to the spin and charge drift-diffusion formalism.

Spin and charge drift-diffusion in ultra-scaled MRAM cells.

Designing advanced single-digit shape-anisotropy MRAM cells requires an accurate evaluation of spin currents and torques in magnetic tunnel junctions (MTJs) with elongated free and reference layers. For this purpose, we extended the analysis approach successfully used in nanoscale metallic spin valves to MTJs by introducing proper boundary conditions for the spin currents at the tunnel barrier interfaces, and by employing a conductivity locally dependent on the angle between the magnetization vectors for the charge current. The experimentally measured voltage and angle dependencies of the torques acting on the free layer are thereby accurately reproduced.