Synthesis and theoretical study of a mixed-ligand indium(III) complex for fabrication of β-InS thin films chemical vapor deposition.

Two new heteroleptic indium aminothiolate compounds [InClSCHN(Me)SCH][1] and [InSCHN(Me)SCH(CHFNO)] [2] were synthesized by salt metathesis reaction involving indium trichloride, aminothiol, and N,O-β-heteroarylalkenol ligands. The complexes were subsequently purified and thoroughly characterized by nuclear magnetic resonance (NMR) analysis, elemental studies, mass spectroscopy, and X-ray diffraction single crystal analysis that showed a trigonal bipyramidal coordination of In(III) in both complexes. Thermogravimetric analysis of [1] revealed a multistep decomposition pathway and the formation of InS at 350 °C, which differed from the pattern of [2] due to the lower thermal stability of [1].

Direct Synthesis of Two-Dimensional SnSe and SnSe through Molecular Scale Preorganization.

Two-dimensional tin monoselenide (SnSe) and tin diselenide (SnSe) materials were efficiently produced by the thermolysis of molecular compounds based on a new class of seleno-ligands. Main group metal chalcogenides are of fundamental interest due to their layered structures, thickness-dependent modulation in electronic structure, and small effective mass, which make them attractive candidates for optoelectronic applications. We demonstrate here the synthesis of stable tin selenide precursors by reductive bond cleavage in the dimeric diselenide ligand (SeCHN(Me)CHSe) in the presence of SnCl.

Single source precursor route to nanometric tin chalcogenides.

Low-temperature solution phase synthesis of nanomaterials using designed molecular precursors enjoys tremendous advantages over traditional high-temperature solid-state synthesis. These include atomic-level control over stoichiometry, homogeneous elemental dispersion and uniformly distributed nanoparticles. For exploiting these advantages, however, rationally designed molecular complexes having certain properties are usually required.

Vapor Phase Synthesis of SnS Facilitated by Ligand-Driven "Launch Vehicle" Effect in Tin Precursors.

Extraordinary low-temperature vapor-phase synthesis of SnS thin films from single molecular precursors is attractive over conventional high-temperature solid-state methods. Molecular-level processing of functional materials is accompanied by several intrinsic advantages such as precise control over stoichiometry, phase selective synthesis, and uniform substrate coverage. We report here on the synthesis of a new heteroleptic molecular precursor containing (i) a thiolate ligand forming a direct Sn-S bond, and (ii) a chelating O^N^N-donor ligand introducing a "launch vehicle"-effect into the synthesized compound, thus remarkably increasing its volatility.

Influence of the choice of precursors on the synthesis of two-dimensional transition metal dichalcogenides.

The interest in transition metal dichalcogenides (TMDCs; ME; M = transition metal; E = chalcogenide, y = valence of the metal) has grown exponentially across various science and engineering disciplines due to their unique structural chemistry manifested in a two-dimensional lattice that results in extraordinary electronic and transport properties desired for applications in sensors, energy storage and optoelectronic devices. Since the properties of TMDCs can be tailored by changing the stacking sequence of 2D monolayers with similar or dis-similar materials, a number of synthetic routes essentially based on the disintegration of bulk (, chemical exfoliation) or the integration of atomic constituents (, vapor phase growth) have been explored. Despite a large body of data available on the chemical synthesis of TMDCs, experimental strategies with high repeatability of control over film thickness, phase and compositional purity remain elusive, which calls for innovative synthetic concepts offering, for instance, self-limited growth in the -direction and homogeneous lateral topography.