Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks.

The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si waveguide layer were investigated using micro-photoluminescence (micro-PL) spectroscopy. As radiation sources, GeSi quantum dots were embedded in the waveguide. A set of narrow PL peaks superimposed on the broad bands were observed in the range of quantum dot emissions.

Fast Recombination of Charge-Transfer State in Organic Photovoltaic Composite of P3HT and Semiconducting Carbon Nanotubes Is the Reason for Its Poor Photovoltaic Performance.

Although the photovoltaic performance of the composite of poly-3-hexylthiophene (P3HT) with semiconducting single-walled carbon nanotubes (s-SWCNT) is promising, the short-circuit current density is much lower than that for typical polymer/fullerene composites. Out-of-phase electron spin echo (ESE) technique with laser excitation of the P3HT/s-SWCNT composite was used to clarify the origin of the poor photogeneration of free charges. The appearance of out-of-phase ESE signal is a solid proof that the charge-transfer state of P3HT/s-SWCNT is formed upon photoexcitation and the electron spins of P3HT and s-SWCNT are correlated.

Radiation-Stimulated Formation of Two-Dimensional Structures Based on Calcium Silicide.

The formation of CaSi polycrystalline structures under the postgrowth electron irradiation of epitaxial CaF/Si(111) films with embedded thin Si layers was studied. The dependence on the electron exposure time was investigated for two types of structures with different film thicknesses. The optimal conditions for the formation of two-dimensional CaSi structures were found.

One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate.

A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre-patterned substrate both for the growth of spatially ordered QDs and for the formation of photonic crystal (PhC) in which QDs are embedded. The periodic array of deep pits on the SOI substrate simultaneously serves as a template for spatially ordering of QDs and the basis for two-dimensional PhCs.

Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge.

The photoluminescence (PL) of the combined Ge/Si structures representing a combination of large (200-250 nm) GeSi disk-like quantum dots (nanodisks) and four-layered stacks of compact groups of smaller (30 nm) quantum dots grown in the strain field of nanodisks was studied. The multiple increase in the PL intensity was achieved by the variation of parameters of vertically aligned quantum dot groups. The experimental results were analyzed on the basis of calculations of energy spectra, electron and hole wave functions.