Plasmon-Phonon Coupling in Electrostatically Gated β-GaO Films with Mobility Exceeding 200 cm V s.

Monoclinic β-GaO, an ultra-wide bandgap semiconductor, has seen enormous activity in recent years. However, the fundamental study of the plasmon-phonon coupling that dictates electron transport properties has not been possible due to the difficulty in achieving higher carrier density (without introducing chemical disorder). Here, we report a highly reversible, electrostatic doping of β-GaO films with tunable carrier densities using ion-gel-gated electric double-layer transistor configuration.

Gate-Controlled Metal-Insulator Transition in TiS Nanowire Field-Effect Transistors.

We explore the electrical characteristics of TiS nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ∼20-30 cm/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials.

Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X-ray Absorption and Photoelectron Spectroscopies.

Interfacing graphene with metal oxides is of considerable technological importance for modulating carrier density through electrostatic gating as well as for the design of earth-abundant electrocatalysts. Herein, we probe the early stages of the atomic layer deposition (ALD) of HfO on graphene oxide using a combination of C and O K-edge near-edge X-ray absorption fine structure spectroscopies and X-ray photoelectron spectroscopy. Dosing with water is observed to promote defunctionalization of graphene oxide as a result of the reaction between water and hydroxyl/epoxide species, which yields carbonyl groups that further react with migratory epoxide species to release CO .