Thermal atomic layer deposition of InO thin films using a homoleptic indium triazenide precursor and water.

Indium oxide (InO) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of InO by thermal atomic layer deposition (ALD) using our recently reported indium(III) triazenide precursor and HO. A temperature interval with self-limiting growth was found between ∼270 and 385 °C with a growth per cycle of ∼1.

Single excitons in InGaN quantum dots on GaN pyramid arrays.

Fabrication of single InGaN quantum dots (QDs) on top of GaN micropyramids is reported. The formation of single QDs is evidenced by showing single sub-millielectronvolt emission lines in microphotoluminescence (μPL) spectra. Tunable QD emission energy by varying the growth temperature of the InGaN layers is also demonstrated.