Selective excitation and detection of spin states in a single nanowire quantum dot.

We report exciton spin memory in a single InAs(0.25)P(0.75) quantum dot embedded in an InP nanowire.

Growth and characterization of InP nanowires with InAsP insertions.

We report on the fabrication by Au-assisted molecular beam epitaxy of InP nanowires with embedded InAsP insertions. The growth temperature affects the nucleation on the nanowire lateral surface. It is therefore possible to grow the wires in two steps: to fabricate an axial heterostructure (at 420 degrees C), and then cover it by a shell (at 390 degrees C).