Quantum Hall effect in a CVD-grown oxide.

Two-dimensional (2D) electron systems are promising for investigating correlated quantum phenomena. In particular, 2D oxides provide a platform that can host various quantum phases such as quantized Hall effect, superconductivity, or magnetism. The realization of such quantum phases in 2D oxides heavily relies on dedicated heterostructure growths.

Quantum transport in InSb quantum well devices: progress and perspective.

InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron effective mass, high electron mobility, large effective-factor, and strong spin-orbit interactions. These unique properties make InSb interesting for both industrial applications and quantum information processing. In this paper, we provide a review of recent progress in quantum transport research on InSb quantum well devices.

Phonon-mediated room-temperature quantum Hall transport in graphene.

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder. However, due to large Landau level (LL) separation (~2000 K at B = 30 T), graphene can support the QH effect up to room temperature (RT), concomitant with a non-negligible population of acoustic phonons with a wave-vector commensurate to the inverse electronic magnetic length. Here, we demonstrate that graphene encapsulated in hexagonal boron nitride (hBN) realizes a novel transport regime, where dissipation in the QH phase is governed predominantly by electron-phonon scattering.

Electrical and optical properties of transition metal dichalcogenides on talc dielectrics.

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses.

Electron Trapping Mechanism in LaAlO_{3}/SrTiO_{3} Heterostructures.

In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. The amount of trapped electrons decays exponentially away from the interface.

Three-Dimensional Superconducting Nanohelices Grown by He-Focused-Ion-Beam Direct Writing.

Novel schemes based on the design of complex three-dimensional (3D) nanoscale architectures are required for the development of the next generation of advanced electronic components. He focused-ion-beam (FIB) microscopy in combination with a precursor gas allows one to fabricate 3D nanostructures with an extreme resolution and a considerably higher aspect ratio than FIB-based methods, such as Ga FIB-induced deposition, or other additive manufacturing technologies. In this work, we report the fabrication of 3D tungsten carbide nanohelices with on-demand geometries via controlling key deposition parameters.

Symmetry and Correlation Effects on Band Structure Explain the Anomalous Transport Properties of (111) LaAlO_{3}/SrTiO_{3}.

The interface between the two insulating oxides SrTiO_{3} and LaAlO_{3} gives rise to a two-dimensional electron system with intriguing transport phenomena, including superconductivity, which are controllable by a gate. Previous measurements on the (001) interface have shown that the superconducting critical temperature, the Hall density, and the frequency of quantum oscillations, vary nonmonotonically and in a correlated fashion with the gate voltage. In this Letter we experimentally demonstrate that the (111) interface features a qualitatively distinct behavior, in which the frequency of Shubnikov-de Haas oscillations changes monotonically, while the variation of other properties is nonmonotonic albeit uncorrelated.

Extremely high conductivity observed in the triple point topological metal MoP.

Weyl and Dirac fermions have created much attention in condensed matter physics and materials science. Recently, several additional distinct types of fermions have been predicted. Here, we report ultra-high electrical conductivity in MoP at low temperature, which has recently been established as a triple point fermion material.

Anomalous Hall effect in Weyl semimetal half-Heusler compounds RPtBi (R = Gd and Nd).

Topological materials ranging from topological insulators to Weyl and Dirac semimetals form one of the most exciting current fields in condensed-matter research. Many half-Heusler compounds, RPtBi (R = rare earth), have been theoretically predicted to be topological semimetals. Among various topological attributes envisaged in RPtBi, topological surface states, chiral anomaly, and planar Hall effect have been observed experimentally.

Full superconducting dome of strong Ising protection in gated monolayer WS.

Many recent studies show that superconductivity not only exists in atomically thin monolayers but can exhibit enhanced properties such as a higher transition temperature and a stronger critical field. Nevertheless, besides being unstable in air, the weak tunability in these intrinsically metallic monolayers has limited the exploration of monolayer superconductivity, hindering their potential in electronic applications (e.g.

Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP and MoP.

The peculiar band structure of semimetals exhibiting Dirac and Weyl crossings can lead to spectacular electronic properties such as large mobilities accompanied by extremely high magnetoresistance. In particular, two closely neighboring Weyl points of the same chirality are protected from annihilation by structural distortions or defects, thereby significantly reducing the scattering probability between them. Here we present the electronic properties of the transition metal diphosphides, WP and MoP, which are type-II Weyl semimetals with robust Weyl points by transport, angle resolved photoemission spectroscopy and first principles calculations.

Electron-hole asymmetry of the topological surface states in strained HgTe.

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint.

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe.

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes. Here we report a high-quality 2D electron gas in few-layer InSe encapsulated in hexagonal boron nitride under an inert atmosphere.

Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias.

Rational material design can accelerate the discovery of materials with improved functionalities. This approach can be implemented in Heusler compounds with tunable magnetic sublattices to demonstrate unprecedented magnetic properties. Here, we have designed a family of Heusler alloys with a compensated ferrimagnetic state.

Interaction phenomena in graphene seen through quantum capacitance.

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields.

Ligand-controlled magnetic interactions in Mn(4) clusters.

A method is presented to design magnetic molecules in which the exchange interaction between adjacent metal ions is controlled by electron density withdrawal through their bridging ligands. We synthesized a novel Mn(4) cluster in which the choice of the bridging carboxylate ligands (acetate, benzoate, or trifluoroacetate) determines the type and strength of the three magnetic exchange couplings (J(1), J(2), and J(3)) present between the metal ions. Experimentally measured magnetic moments in high magnetic fields show that, upon electron density withdrawal, the main antiferromagnetic exchange constant J(1) decreases from -2.

Tuning of the size of Dy2O3 nanoparticles for optimal performance as an MRI contrast agent.

The transverse 1H relaxivities of aqueous colloidal solutions of dextran coated Dy2O3 nanoparticles of different sizes were investigated at magnetic field strengths (B) between 7 and 17.6 T. The particle size with the maximum relaxivity (r2) appears to vary between 70 nm at 7 T (r2 approximately = 190 s(-1) mM(-1)) and 60 nm at 17.

Dissipative quantum hall effect in graphene near the Dirac point.

We report on the unusual nature of the nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counterpropagating edge states. Such states, intrinsic to massless Dirac quasiparticles, manifest themselves in a large longitudinal resistivity rho(xx) > or approximately h/e(2), in striking contrast to rho(xx) behavior in the standard QHE. The nu=0 state in graphene is also predicted to exhibit pronounced fluctuations in rho(xy) and rho(xx) and a smeared zero Hall plateau in sigma(xy), in agreement with experiment.