Effects of Poly-Si Grain Boundary on Retention Characteristics under Cross-Temperature Conditions in 3-D NAND Flash Memory.

Electrical characteristics with various program temperatures () in three-dimensional (3-D) NAND flash memory are investigated. The cross-temperature conditions of the up to 120 °C and the read temperature () at 30 °C are used to analyze the influence of grain boundaries (GB) on the bit line current () and threshold voltage (). The shift in the E-P-E pattern is successfully decomposed into the charge loss (Δ) component and the poly-Si GB (Δ) component.

Organizing Reliable Polymer Electrode Lines in Flexible Neural Networks via Coffee Ring-Free Micromolding in Capillaries.

With an increase in the demand for smart wearable systems, artificial synapse arrays for flexible neural networks have received considerable attention. A synaptic device with a two-terminal configuration is promising for complex neural networks because of its ability to scale to a crossbar array architecture. To realize practical crossbar arrays with a high density, it is essential to achieve reliable electrode lines that act as signal terminals.