Analog Synaptic Transistor with Al-Doped HfO Ferroelectric Thin Film.

Neuromorphic computing has garnered significant attention because it can overcome the limitations of the current von-Neumann computing system. Analog synaptic devices are essential for realizing hardware-based artificial neuromorphic devices; however, only a few systematic studies in terms of both synaptic materials and device structures have been conducted so far, and thus, further research is required in this direction. In this study, we demonstrate the synaptic characteristics of a ferroelectric material-based thin-film transistor (FeTFT) that uses partial switching of ferroelectric polarization to implement analog conductance modulation.