Microelectronic magnetic sensors are essential in diverse applications, including automotive, industrial, and consumer electronics. Hall-effect devices hold the largest share of the magnetic sensor market, and they are particularly valued for their reliability, low cost and CMOS compatibility. This paper introduces a novel 3-axis Hall-effect sensor element based on an inverted pyramid structure, realized by leveraging MEMS micromachining and CMOS processing.
View Article and Find Full Text PDF