High-power quasi-CW diode-pumped 750-nm AlGaAs VECSEL emitting a peak power of 29.6 W and an average power of 8.5 W.

A peak output power of 29.6 W and an average output power of 8.5 W at a wavelength of 750 nm were demonstrated in quasi-CW multi-mode operation using an AlGaAs-based vertical external-cavity surface-emitting laser (VECSEL) diode-pumped at a wavelength of 675 nm.

2.5 W continuous wave output at 665 nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser.

An output power of 2.5 W at a wavelength of 665 nm was obtained from a quantum-well (QW) and multipass-pumped AlGaInP-based vertical-external-cavity surface-emitting laser operated at a heat sink temperature of 10°C. Intracavity frequency doubling resulted in an output power of 820 mW at a wavelength of 333 nm.

Enhanced efficiency of AlGaInP disk laser by in-well pumping.

The performance of a 665-nm GaInP disk laser operated continuous-wave at 15°C both in-well-pumped at 640 nm and barrier pumped at 532 nm is reported. The efficiency with respect to the absorbed power was enhanced by 3.5 times when using a 640-nm pump instead of a 532-nm pump.

Power-scalable system of phase-locked single-mode diode lasers.

The direct use of diode lasers for high-power applications in material processing is limited to applications with relatively low beam quality and power density requirements. To achieve high beam quality one must use single-mode diode lasers, however with the drawback of relatively low optical output powers from these components. To realize a high-power system while conserving the high beam quality of the individual emitters requires coherent coupling of the emitters.

Coherent coupling of vertical-cavity surface-emitting laser arrays and efficient beam combining by diffractive optical elements: concept and experimental verification.

A phase-locked diode-laser system based on master-slave coupling of two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays by injection locking is presented. Frequencies and phases are adjusted by laser-trimmed microresistors. Additional beam-transformation optics consisting of two diffractive optical elements (DOEs) and a Fourier lens concentrates most of the far-field power in a nearly diffraction-limited beam.