Dopant morphology as the factor limiting graphene conductivity.

Graphene's low intrinsic carrier concentration necessitates extrinsic doping to enhance its conductivity and improve its performance for application as electrodes or transparent conductors. Despite this importance limited knowledge of the doping process at application-relevant conditions exists. Employing in-situ carrier transport and Raman characterization of different dopants, we here explore the fundamental mechanisms limiting the effectiveness of doping at different doping levels.

Measurement of LED chips using a large-area silicon photodiode.

We propose the output power measurement of bare-wafer/chip light-emitting diodes (LEDs) using a large-area silicon (Si) photodiode with a simple structure and high accuracy relative to the conventional partial flux measurement using an integrating sphere. To obtain the optical characteristics of the LED chips measured using the two methods, three-dimensional ray-trace simulations are used to perform the measurement deviations owing to the chip position offset or tilt angle. The ray-tracing simulation results demonstrate that the deviation of light remaining in the integrating sphere is approximately 65% for the vertical LED chip and 53% for the flip-chip LED chip if the measurement distance in partial flux method is set to be 5-40 mm.

Patterned growth of ZnO nanostructures based on the templation of plant cell walls.

A new and general approach based on vapor-phase transport technique using Au-coated plant cell walls has been developed to synthesize patterned ZnO nanostructures. Nanowires, nanodendrites and nanotowers were fabricated by adsorption of different metallic ions on plant cell walls. It is shown that plant cell wall can serve as a well-defined template to grow patterned nanostructures.

Photocurrent enhancement of SnO2 nanowires through Au-nanoparticles decoration.

It is found that the sensitivity of photoresponse of SnO(2) nanowires can be enhanced by metallic particles decoration. The underlying mechanism is attributed to the formation of the Schottky junction on nanowires surface in the vicinity of metallic nanoparticles. The increment in the barrier height and width of space charge region due to the existence of Schottky junction increases the surface electric field and enhances the spatial separation effect, which then prolongs the lifetime of photoinduced electron and consequently increases the photoresponse gain.

Recombination dynamics in CdTe/CdSe type-II quantum dots.

Recombination dynamics in CdTe/CdSe core-shell type-II quantum dots (QDs) has been investigated by time-resolved photoluminescence (PL) spectroscopy. A very long PL decay time of several hundred nanoseconds has been found at low temperature, which can be rationalized by the spatially separated electrons and holes occurring in a type-II heterostructure. For the temperature dependence of the radiative lifetime, the linewidth and the peak energy of PL spectra show that the recombination of carriers is dominated by delocalized excitons at temperatures below 150 K, while the mixture of delocalized excitons, electrons and holes overwhelms the process at higher temperature.