Proximity Effect induced transport Properties between MBE grown (BiSb)Se Topological Insulators and Magnetic Insulator CoFeO.

In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (BiSb)Se/CoFeO (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (BiSb)Se/CFO interface.