IEEE Trans Ultrason Ferroelectr Freq Control
June 2022
An ultralow program/erase voltage ( |V| = 4 V) is demonstrated by using an antiferroelectric-ferroelectric field-effect transistor (AFE-FE-FET) through a multipeak coercive E -field ( E ) concept for a four-level stable state with outstanding endurance (>10 cycles) and data retention (>10 s at 65 °C). The mixture of ferroelectric (FE) and AFE domains can provide stable multistate and data storage with zero bias for multilevel cell (MLC) applications. HfZrO (HZO) with AFE-FE assembles an orthorhombic/tetragonal (o/t) phase composition and is achieved by [Zr] modulation in an HZO system.
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