AlO Grain Boundary Segregation in a Thermal Barrier Coating on a Ni-Based Superalloy.

The segregation of reactive elements (REs) along thermally grown oxide (TGO) grain boundaries has been associated to slower oxide growth kinetics and improved creep properties. However, the incorporation and diffusion of these elements into the TGO during oxidation of Ni alloys remains an open question. In this work, electron backscatter diffraction in transmission mode (t-EBSD) was used to investigate the microstructure of TGO within the thermal barrier coating on a Ni-based superalloy, and atom probe tomography (APT) was used to quantify the segregation behavior of REs to α-Al2O3 grain boundaries.

Study of LEAP® 5000 Deadtime and Precision via Silicon Pre-Sharpened-Microtip™ Standard Specimens.

Atom probe tomography (APT) is a technique that has expanded significantly in terms of adoption, dataset size, and quality during the past 15 years. The sophistication used to ensure ultimate analysis precision has not kept pace. The earliest APT datasets were small enough that deadtime and background considerations for processing mass spectrum peaks were secondary.

Compositional boundary layers trigger liquid unmixing in a basaltic crystal mush.

The separation of immiscible liquids has significant implications for magma evolution and the formation of magmatic ore deposits. We combine high-resolution imaging and electron probe microanalysis with the first use of atom probe tomography on tholeiitic basaltic glass from Hawaii, the Snake River Plain, and Iceland, to investigate the onset of unmixing of basaltic liquids into Fe-rich and Si-rich conjugates. We examine the relationships between unmixing and crystal growth, and the evolution of a nanoemulsion in a crystal mush.

A Study of Parameters Affecting Atom Probe Tomography Specimen Survivability.

Specimen survivability is a primary concern to those who utilize atom probe tomography (APT) for materials analysis. The state-of-the-art in understanding survivability might best be described as common-sense application of basic physics principles to describe failure mechanisms. For example, APT samples are placed under near-failure mechanical-stress conditions, so reduction in the force required to initiate field evaporation must provide for higher survivability-a common sense explanation of survivability.

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography.

The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called "ALD supercycles" is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width-half-maximum of ∼2 nm.

Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs).

The semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution.

Modern Focused-Ion-Beam-Based Site-Specific Specimen Preparation for Atom Probe Tomography.

Approximately 30 years after the first use of focused ion beam (FIB) instruments to prepare atom probe tomography specimens, this technique has grown to be used by hundreds of researchers around the world. This past decade has seen tremendous advances in atom probe applications, enabled by the continued development of FIB-based specimen preparation methodologies. In this work, we provide a short review of the origin of the FIB method and the standard methods used today for lift-out and sharpening, using the annular milling method as applied to atom probe tomography specimens.

Implementing Transmission Electron Backscatter Diffraction for Atom Probe Tomography.

There are advantages to performing transmission electron backscattering diffraction (tEBSD) in conjunction with focused ion beam-based specimen preparation for atom probe tomography (APT). Although tEBSD allows users to identify the position and character of grain boundaries, which can then be combined with APT to provide full chemical and orientation characterization of grain boundaries, tEBSD can also provide imaging information that improves the APT specimen preparation process by insuring proper placement of the targeted grain boundary within an APT specimen. In this report we discuss sample tilt angles, ion beam milling energies, and other considerations to optimize Kikuchi diffraction pattern quality for the APT specimen geometry.

Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network.

Multiscale self-assembly is ubiquitous in nature but its deliberate use to synthesize multifunctional three-dimensional materials remains rare, partly due to the notoriously difficult problem of controlling topology from atomic to macroscopic scales to obtain intended material properties. Here, we propose a simple, modular, noncolloidal methodology that is based on exploiting universality in stochastic growth dynamics and driving the growth process under far-from-equilibrium conditions toward a preplanned structure. As proof of principle, we demonstrate a confined-but-connected solid structure, comprising an anisotropic random network of silicon quantum-dots that hierarchically self-assembles from the atomic to the microscopic scales.

Atom probe tomography (APT) of carbonate minerals.

Atom probe tomography (APT) combines the highest spatial resolution with chemical data at atomic scale for the analysis of materials. For geological specimens, the process of field evaporation and molecular ion formation and interpretation is not yet entirely understood. The objective of this study is to determine the best conditions for the preparation and analysis by APT of carbonate minerals, of great importance in the interpretation of geological processes, focusing on the bulk chemical composition.

Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography.

In atom probe tomography (APT), some elements tend to field evaporate preferentially in multi-hit detection events. Boron (B) is one such element. It is thought that a large fraction of the B signal may be lost during data acquisition and is not reported in the mass spectrum or in the 3-D APT reconstruction.

On the use of simulated field-evaporated specimen apex shapes in atom probe tomography data reconstruction.

The ability to accurately reconstruct original spatial positions of field-evaporated ions emitted from a surface is fundamental to the success of atom probe tomography. As such, a clear understanding of the evolution of specimen shape and the resultant ions' trajectories during field evaporation plays an important role in improving reconstruction accuracy. To further this understanding, field-evaporation simulations of a bilayer specimen composed of two materials having an evaporation field difference of 20% were performed.

Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst.

Local electrode atom probe (LEAP) tomography of Al-catalyzed silicon nanowires synthesized by the vapor–liquid–solid method is presented. The concentration of Al within the Al-catalyzed nanowire was found to be 2 × 10(20) cm(-3), which is higher than the expected solubility limit for Al in Si at the nanowire growth temperature of 550°C. Reconstructions of the Al contained within the nanowire indicate a denuded region adjacent to the Al catalyst/Si nanowire interface, while Al clusters are distributed throughout the rest of the silicon nanowire.

Chemical mapping of mammalian cells by atom probe tomography.

In atom probe tomography (APT), a technique that has been used to determine 3D maps of ion compositions of metals and semiconductors at sub-nanometer resolutions, controlled emissions of ions can be induced from needle-shaped specimens in the vicinity of a strong electric field. Detection of these ions in the plane of a position sensitive detector provides two-dimensional compositional information while the sequence of ion arrival at the detector provides information in the third dimension. Here we explore the use of APT technology for imaging biological specimens.