We developed new measurement configurations based on organic electrochemical transistors (OECTs). Three types of COOH-functionalized bioreceptor layers were deposited on indium tin oxide (ITO) electrodes on poly(ethylene terephthalate) (PET) substrates and their performance was tested using single gate functionalization organic electrochemical transistor (S-OECT) and dual gate functionalization organic electrochemical transistor (D-OECT) configurations. The three layers included one p-type semiconductor, one insulator, and one self-assembled layer, and the dual gates were connected in series through buffer solutions, so the solution-electrode interfaces had the opposite polarities.
View Article and Find Full Text PDFWe synthesized highly branched and electron-donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field-effect transistor. The influence of these groups on dielectric function, charge retention, and threshold voltage shifts (Δ) depending on their positions in dielectric multilayers was determined. We compared the observations made on an -perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE).
View Article and Find Full Text PDFThe development of high-performance-conjugated polymer-based gas sensors involves detailed structural tailoring such that high sensitivities are achieved without compromising the stability of the fabricated devices. In this work, we systematically developed a series of diketopyrrolopyrrole (DPP)-based polymer semiconductors by modifying the polymer backbone to achieve and rationalize enhancements in gas sensitivities and electronic stability in air. NO- and NH-responsive polymer-based organic field-effect transistors (OFETs) are described with improved air stability compared to all-thiophene conjugated polymers.
View Article and Find Full Text PDFCharacterizing doping effects in a conductive polymer and physical diffusion in a passive polymer were performed using a remote-gate field-effect transistor (RG FET) detection system that was able to measure the electrical potential perturbation of a polymer film coupled to the gate of a silicon FET. Poly(3-hexylthiophene) (P3HT) film doped using various concentrations of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) solutions imposed additional positive potentials on the P3HT RG, resulting in a lower threshold voltage ( V) on the n-channel silicon FET. Changes in V were related to the induced hole concentrations and hole mobility in P3HT films by using our V shifting model for the RG FET.
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