Elementary cellular automata realized by stateful three-memristor logic operations.

Cellular automata (CA) are computational systems that exhibit complex global behavior arising from simple local rules, making them a fascinating candidate for various research areas. However, challenges such as limited flexibility and efficiency on conventional hardware platforms still exist. In this study, we propose a memristor-based circuit for implementing elementary cellular automata (ECA) by extending the stateful three-memristor logic operations derived from material implication (IMP) logic gates.

Dual functional states of working memory realized by memristor-based neural network.

Working memory refers to the brain's ability to store and manipulate information for a short period. It is disputably considered to rely on two mechanisms: sustained neuronal firing, and "activity-silent" working memory. To develop a highly biologically plausible neuromorphic computing system, it is anticipated to physically realize working memory that corresponds to both of these mechanisms.

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO gate dielectric.

A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaO gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (, excitatory postsynaptic current, short-term memory plasticity, short-term memory to long-term memory transition, and potentiation and depression) under voltage pulse stimulus.

Uncovering the Indium Filament Revolution in Transparent Bipolar ITO/SiO/ITO Resistive Switching Memories.

Transparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread applications. To reveal the actual working mechanism in transparent ReRAMs with the ITO electrode, we investigate the transparent ITO/SiO/ITO memory devices (∼82% transmittance in the visible region) and compare it with ITO/SiO/Au memory devices, which both can exhibit reproducible bipolar switching.

A Deformable and Highly Robust Ethyl Cellulose Transparent Conductor with a Scalable Silver Nanowires Bundle Micromesh.

Huge challenges remain regarding the facile fabrication of neat metallic nanowires mesh for high-quality transparent conductors (TCs). Here, a scalable metallic nanowires bundle micromesh is achieved readily by a spray-assisted self-assembly process, resulting in a conducting mesh with controllable ring size (4-45 µm) that can be easily realized on optional polymer substrates, rendering it transferable to various deformable and transparent substrates. The resultant conductors with the embedded nanowires bundle micromesh deliver superior and customizable optoelectronic performances, and can sustain various mechanical deformations, environmental exposure, and severe washing, exhibiting feasibility for large-scale manufacturing.

Resonant scattering of green light enabled by Ag@TiO and its application in a green light projection screen.

The ability to selectively scatter green light is essential for an RGB transparent projection display, and this can be achieved by a silver-core, titania-shell nanostructure (Ag@TiO), based on the metallic nanoparticle's localized surface plasmon resonance. The ability to selectively scatter green light is shown in a theoretical design, in which structural optimization is included, and is then experimentally verified by characterization of a transparent film produced by dispersing such nanoparticles in a polymer matrix. A visual assessesment indicates that a high-quality green image can be clearly displayed on the transparent film.

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory.

Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate.

Unlocking the potential of SnS: Transition metal catalyzed utilization of reversible conversion and alloying reactions.

The alloying-dealloying reactions of SnS proceeds with the initial conversion reaction of SnS with lithium that produces LiS. Unfortunately, due to the electrochemical inactivity of LiS, the conversion reaction of SnS is irreversible, which significantly limit its potential applications in lithium-ion batteries. Herein, a systematic understanding of transition metal molybdenum (Mo) as a catalyst in SnS anode is presented.

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.

Two dimensional layered Co0.85Se nanosheets as a high-capacity anode for lithium-ion batteries.

In recent years, two-dimensional (2D) layered transitional metal chalcogenides (TMCs) have received much attention as promising electrode materials in energy storage. Although recent reports on 2D TMC nanostructures have demonstrated promising electrochemical performances, the major scientific challenge is to develop a viable synthesis process to produce layered structures of chalcogenides (Co, Ni or Fe based TMCs) as anode materials. In this work, we propose the synthesis of layered Co0.

Ultrahigh Performance of Novel Capacitive Deionization Electrodes based on A Three-Dimensional Graphene Architecture with Nanopores.

In order to achieve optimal desalination during capacitive deionization (CDI), CDI electrodes should possess high electrical conductivity, large surface area, good wettability to water, narrow pore size distribution and efficient pathways for ion and electron transportation. In this work, we fabricated a novel CDI electrode based on a three-dimensional graphene (3DG) architecture by constructing interconnected graphene sheets with in-plane nanopores (NP-3DG). As compared to 3DG, NP-3DG features a larger specific surface area of 445 m(2) g(-1) and therefore the higher specific capacitance.

Wavelength tunable electroluminescence from randomly assembled n-CdS(x)Se(1-x) nanowires/p+-SiC heterojunction.

Visible electroluminescence (EL) with tunable wavelength has been observed at room temperature from randomly assembled n-CdS(x)Se(1-x) nanowires grown on a p(+)-SiC substrate by the vapor transport technique. The dominant emission peaks can be tuned from ∼720 to ∼520 nm by varying the composition of the alloy nanowires.