Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance InO thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.
View Article and Find Full Text PDFRationale: Butane is an important industrial chemical in which photo-processes are very important for the initiation of reactions. Recent advances in nanosecond pulsed laser technology have led to high laser intensities being available to researchers to enable these photo-processes to be studied in compounds such as butane.
Methods: The photo-decomposition, dissociation and combustion mechanisms in the neutral butane molecule have been studied in detail, by investigating the multiphoton (MP) dissociative ionisation of its n- and i-isomers, using a time-of-flight mass spectrometer connected to a high power nanosecond laser system.