Strong antiferromagnetic interlayer exchange coupling induced by small additions of Re to an Ir interlayer in synthetic antiferromagnetic systems.

Synthetic antiferromagnetic (AF) pinned layers are widely used in order to reduce the stray field of the pinned layer and stabilize the magnetic alignment of the reference layer in perpendicular magnetic tunnel junctions (MTJs). Here, a detailed study of Re concentration dependence of the magnitude of interlayer exchange coupling (|J|) in a synthetic AF system with an Ir-Re interlayer is conducted. We observed strong AF interlayer exchange coupling caused by small amounts of Re addition and phase shift of the AF peak to thinner interlayer region in synthetic AF systems with Ir-Re interlayer.

Metastable body-centered cubic CoMnFe alloy films with perpendicular magnetic anisotropy for spintronics memory.

A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is utilized as a barrier material of -MTJs. Since the -MTJ is a key device of current spintronics memory, . spin-transfer-torque magnetoresistive random access memory (STT-MRAM), it attracts attention for further advance to explore new magnetic materials showing both large PMA and TMR.

study of electronic and magnetic properties of MnRu/MgO (001) heterojunctions (Al, Ge).

We studied the applicability of Heusler alloys MnRu(= Al, Ga, Ge, Si) to the electrode materials of MgO-based magnetic tunnel junctions. All these alloys possess HgCuTi-type inverse Heusler alloy structure and ferrimagnetic ground state. Our study reveals the half-metallic electronic structure with highly spin-polarized Δband, which is robust against atomic disorder.

Magnetic properties and electronic structure of Mn-Ni-Ga magnetic shape memory alloys.

Influence of disorder, antisite defects, martensite transition and compositional variation on the magnetic properties and electronic structure of Mn(2)NiGa and Mn(1+x)Ni(2-x)Ga magnetic shape memory alloys have been studied by using full potential spin-polarized scalar relativistic Korringa-Kohn-Rostocker (FP-SPRKKR) method. Mn(2)NiGa is ferrimagnetic and its total spin moment increases when disorder in the occupancy of MnNi (Mn atom in Ni position) is considered. The moment further increases when Mn-Ga antisite defect [1] is included in the calculation.