We present a novel photon-acid diffusion method to integrate polymer microlenses (MLs) on a four-channel, high-speed photo-receiver consisting of normal-incidence germanium (Ge) p-i-n photodiodes (PDs) fabricated on a 200 mm Si substrate. For a 29 µm diameter PD capped with a 54 µm diameter ML, its dark current, responsivity, 3 dB bandwidth (BW), and effective aperture size at -3 V bias and 850 nm wavelength are measured to be 138 nA, 0.6 A/W, 21.
View Article and Find Full Text PDFWe propose and study a practical design of a Germanium photodetector implemented on a Silicon-on-insulator substrate to reach the critical coupling regime under vertical illumination at 1310 nm wavelength. With appropriate optimization procedures, a high efficiency bandwidth product larger than 50 GHz and a large 3dB spectral full width around 30 nm can be obtained given realistic material parameters and fabrication constraints. Our device is fully compatible to the state-of-art CMOS process technology, and may serve as a high performance, low cost solution for the optical receiver in Silicon photonics based optical interconnects.
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