AlN epitaxy on SiC by low-temperature atomic layer deposition layer-by-layer, atomic layer annealing.

AlN thin films were epitaxially grown on a 4H-SiC substrate atomic layer deposition (ALD) along with atomic layer annealing (ALA). By applying the layer-by-layer, ALA treatment using helium/argon plasma in each ALD cycle, the as-deposited film gets crystallization energy from the plasma, which results in significant enhancement of the crystal quality to achieve a highly crystalline AlN epitaxial layer at a deposition temperature as low as 300 °C. In a nanoscale AlN epitaxial layer with a thickness of ∼30 nm, X-ray diffraction reveals a low full-width-at-half-maximum of the AlN (0002) peak of only 176.

Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition.

Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistance was achieved in the metallic channel transistors, in which the oxygen-doped TiN ultrathin-body channels were prepared by the atomic layer delta doping and deposition (AL3D) with precise control of the channel thickness and electron concentration.