Sharpness-induced energy shifts of quantum well states in Pb islands on Cu(111).

We elucidate that the tip sharpness in scanning tunneling microscopy (STM) can be characterized through the number of field-emission (FE) resonances. A higher number of FE resonances indicates higher sharpness. We observe empty quantum well (QW) states in Pb islands on Cu(111) under different tip sharpness levels.

Estimating Young's modulus of graphene with Raman scattering enhanced by micrometer tip.

We demonstrate that the Raman intensities of G and 2D bands of a suspended graphene can be enhanced using a gold tip with an apex size of 2.3 μm. The enhancement decays with the tip-graphene distance exponentially and remains detectable at a distance of 1.

Imaging layer number and stacking order through formulating Raman fingerprints obtained from hexagonal single crystals of few layer graphene.

Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ~30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, A(G)/A(Si), is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A(2D)/A(G), is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis.

Deep and alignment free patterned etching of GaN surface using an atomic force microscope.

Successful deep and alignment-free patterned etching on GaN using atomic force microscope (AFM) local oxidation followed by in-situ chemical etching is demonstrated. Oxide ridges are grown on GaN on an AFM by applying positive sample bias at 80% humidity, with the oxidation reaction expedited by UV light. The oxide ridges are then etched by HCl solution, leaving troughs in the GaN surface.

Direct patterning of zinc oxide with control of reflected color through nano-oxidation using an atomic force microscope.

Atomic force microscope oxidation on Zn creating amorphous ZnO (a-ZnO) with the a-ZnO showing multiple colors under white light at different oxidation voltages was successfully demonstrated. Simulation of reflected colors at different thicknesses of a-ZnO was also conducted. The presented technique can not only be applied to near diffraction limit multilevel optical data storage, but also makes it possible to represent the color spectra observed in nature at near diffraction limits.

Terahertz response of GaN thin films.

The indices of refraction, extinction constants and complex conductivities of the GaN film for frequencies ranging from 0.2 to 2.5 THz are obtained using THz time-domain spectroscopy.

Terahertz time-domain spectroscopy studies of the optical constants of the nematic liquid crystal 5CB.

The optical constants of a nematic liquid crystal, 4'-n-pentyl-4-cyanobiphenyl (5CB), in the frequency range 0.3-1.4 THz were determined by terahertz (THz) time-domain spectroscopy.