Synthesis, Structural, and Raman Investigation of Lanthanide Nitride Powders ( = La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Lu).

Lanthanide nitride (N) materials have garnered significant interest in recent years due to their promising potential as heterogeneous catalysts for green ammonia synthesis under low temperature and pressure reaction conditions. Here, we report on the synthesis of an extended series of lanthanide () nitride powders ( = lanthanum, cerium, neodymium, samarium, gadolinium, terbium, dysprosium, erbium, lutetium) and their structural and vibrational properties. Polycrystalline powders were fabricated using a ball milling mechanochemical process, and their structural properties were assessed by X-ray diffraction (XRD) and transmission electron microscopy (TEM).

Spin polarisation and non-isotropic effective mass in the conduction band of GdN.

GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational and optical spectroscopy study of the electronic structure of stoichiometric and nitrogen vacancy doped GdN. Based on our calculations we provide the effective mass tensor for undoped GdN, and some indicative values for electron doped GdN.

Indications of a ferromagnetic quantum critical point in [Formula: see text].

We investigate the previously observed superconductivity in ferromagnetic SmN in the context of the breakdown of order between two magnetic phases. Nitrogen vacancy doped SmN[Formula: see text] is a semiconductor which lies in the intermediary between ferromagnetic SmN and anti-ferromagnetic Sm. Optical data reported here corroborate the prediction that electrical transport is mediated by Sm 4f defect states, and electrical transport measurements characterise the metal-insulator transition over the doping range.

Vertical transport and tunnelling in rare-earth nitride heterostructures.

We report an investigation of the ferromagnetic semiconductor rare earth nitrides (RENs) for their potential for cryogenic-temperature electronics and spintronics applications. We have identified ohmic contacts suitable for the device structures that demand electron transport through interface layers, and grown REN/insulator/REN heterostructures that display tunnelling characteristics, an enormous 400% tunneling magnetoresistance and a hysteresis promising their exploitation in non-volatile magnetic random access memory.

Europium nitride: a novel diluted magnetic semiconductor.

Europium nitride is semiconducting and contains nonmagnetic Eu3+, but substoichiometric EuN has Eu in a mix of 2+ and 3+ charge states. We show that at Eu2+ concentrations near 15%-20% EuN is ferromagnetic with a Curie temperature as high as 120 K. The Eu3+ polarization follows that of the Eu2+, confirming that the ferromagnetism is intrinsic to the EuN which is, thus, a novel diluted magnetic semiconductor.

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers.

(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization.

Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As.

Multiferroic structures that provide coupled ferroelectric and ferromagnetic responses are of significant interest as they may be used in novel memory devices and spintronic logic elements. One approach towards this goal is the use of composites that couple ferromagnetic and ferroelectric layers through magnetostrictive and piezoelectric strain transmitted across the interfaces. However, mechanical clamping of the films to the substrate limits their response.

Diffusive transport of light in sea ice.

A new experimental technique has been developed and tested in McMurdo Sound, Antarctica for the in situ measurement of the diffusive transport of light through sea ice. A weakly divergent monochromatic light source is placed on the surface of the ice, and the emergent radiation field is measured at both the top and bottom surfaces. The spatial and angular distribution of the emergent radiance, combined with the results of Monte Carlo simulations, has given a simple and direct measurement of the light scattering length, inhomogeneity, and anisotropy in this very complex material.